Wan Yi-Xian, Du Hong-Qiang, Jiang Yang, Zhi Rui, Xie Zheng-Wen, Zhou Yi-Chen, Rothman Mathias Uller, Tao Zhi-Wei, Yin Zhi-Wen, Liang Gui-Jie, Li Wang-Nan, Cheng Yi-Bing, Li Wei
Foshan Xianhu Laboratory of the Advanced Energy Science and Technology Guangdong Laboratory, Xianhu Hydrogen Valley, Foshan, 528200, P. R. China.
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, P. R. China.
Small. 2024 Aug;20(34):e2400985. doi: 10.1002/smll.202400985. Epub 2024 May 1.
Ionic liquids have been widely used to improve the efficiency and stability of perovskite solar cells (PSCs), and are generally believed to passivate defects on the grain boundaries of perovskites. However, few studies have focused on the relevant effects of ionic liquids on intragrain defects in perovskites which have been shown to be critical for the performance of PSCs. In this work, the effect of ionic liquid 1-hexyl-3-methylimidazolium iodide (HMII) on intragrain defects of formamidinium lead iodide (FAPbI) perovskite is investigated. Abundant {111} intragrain planar defects in pure FAPbI grains are found to be significantly reduced by the addition of the ionic liquid HMII, shown by using ultra-low-dose selected area electron diffraction. As a result, longer charge carrier lifetimes, higher photoluminescence quantum yield, better charge carrier transport properties, lower Urbach energy, and current-voltage hysteresis are achieved, and the champion power conversion efficiency of 24.09% is demonstrated. These observations suggest that ionic liquids significantly improve device performance resulting from the elimination of {111} intragrain planar defects.
离子液体已被广泛用于提高钙钛矿太阳能电池(PSC)的效率和稳定性,并且通常认为其可钝化钙钛矿晶界上的缺陷。然而,很少有研究关注离子液体对钙钛矿晶粒内缺陷的相关影响,而这些缺陷已被证明对PSC的性能至关重要。在这项工作中,研究了离子液体1-己基-3-甲基咪唑碘化物(HMII)对甲脒碘化铅(FAPbI)钙钛矿晶粒内缺陷的影响。通过使用超低剂量选区电子衍射表明,添加离子液体HMII后,纯FAPbI晶粒中大量的{111}晶粒内平面缺陷显著减少。结果,实现了更长的电荷载流子寿命、更高的光致发光量子产率、更好的电荷载流子传输特性、更低的乌尔巴赫能量以及电流-电压滞后现象,并展示了24.09%的最佳功率转换效率。这些观察结果表明,离子液体通过消除{111}晶粒内平面缺陷显著提高了器件性能。