Kumar Anjan, Singh Sangeeta, Sharma Dilip Kumar, Al-Bahrani Mohammed, Alhakeem Mohammed Ridha H, Sharma Amit, Anil Kumar T Ch
CAD Lab, GLA University Mathura-281406 India.
Microelectronics and VLSI Lab, National Institute of Technology (NIT) Patna-800005 India.
RSC Adv. 2023 Jan 5;13(2):1402-1411. doi: 10.1039/d2ra07349h. eCollection 2023 Jan 3.
Formamidinium lead iodide (FAPbI) is the most promising perovskite material for producing efficient perovskite solar cells (PSCs). Here, we develop a facile method to obtain an α-phase FAPbI layer with passivated grain boundaries and weakened non-radiative recombination. For this aim, during the FAPbI fabrication process, cetrimonium bromide + 5% potassium thiocyanate (CTABr + 5% KSCN) vapor post-treatment is introduced to remove non-perovskite phases in the FAPbI layer. Incorporation of CTA along with SCN ions induces FAPbI crystallization and stitch grain boundaries, resulting in PSCs with lower defect losses. The vapor-assisted deposition increases the carriers' lifetime in the FAPbI and facilitates charge transport at the interfacial perovskite/hole transport layer a band alignment phenomenon. The treated α-FAPbI layers bring an excellent PCE of 22.34%, higher than the 19.48% PCE recorded for control PSCs. Besides, the well-oriented FAPbI and its higher hydrophobic behavior originating from CTABr materials lead to improved stability in the treated PSCs.
甲脒碘化铅（FAPbI）是用于制造高效钙钛矿太阳能电池（PSC）最具前景的钙钛矿材料。在此，我们开发了一种简便方法来获得具有钝化晶界和减弱非辐射复合的α相FAPbI层。为此，在FAPbI制备过程中，引入溴化十六烷基三甲基铵+5%硫氰酸钾（CTABr + 5% KSCN）气相后处理以去除FAPbI层中的非钙钛矿相。CTA与SCN离子的结合诱导FAPbI结晶并缝合晶界，从而得到具有较低缺陷损失的PSC。气相辅助沉积增加了FAPbI中载流子的寿命，并促进了界面钙钛矿/空穴传输层处的电荷传输——一种能带对准现象。经处理的α-FAPbI层带来了22.34%的优异光电转换效率（PCE），高于对照PSC记录的19.48%的PCE。此外，取向良好的FAPbI及其源自CTABr材料的更高疏水性导致经处理的PSC稳定性提高。
