Zhang Huiwen, Zhu Mingfeng, Zheng Yisong
Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, China.
J Phys Chem Lett. 2024 May 16;15(19):5143-5149. doi: 10.1021/acs.jpclett.4c00777. Epub 2024 May 6.
The Lifshitz transition (LT), a topological structure transition of Fermi surfaces, can induce various intricate physical properties in metallic materials. In this study, through first-principles calculations, we explore the nontrivial effect of the LT on the intrinsic resistivity of the CuN monolayer arising from electron-phonon (el-ph) scattering. We find that when the LT is induced by electron doping, the multibranch Fermi surface simplifies into a single-band profile. Such an LT leads to a decoupling of low-frequency flexural phonons from el-ph scattering due to mirror symmetry. Consequently, the resistivity of the CuN monolayer at room temperature significantly decreases, approaching that of slightly doped graphene, and highlighting the CuN monolayer as a highly conductive two-dimensional metal. Moreover, this LT can bring about a nonlinear temperature dependence of the intrinsic resistivity at a high temperature.
里夫希茨转变（LT）是费米面的一种拓扑结构转变，能够在金属材料中诱导出各种复杂的物理性质。在本研究中，通过第一性原理计算，我们探究了LT对CuN单层膜本征电阻率的非平凡效应，该效应源于电子 - 声子（el-ph）散射。我们发现，当通过电子掺杂诱导LT时，多分支费米面简化为单带分布。由于镜面对称性，这种LT导致低频弯曲声子与el-ph散射解耦。因此，CuN单层膜在室温下的电阻率显著降低，接近轻度掺杂石墨烯的电阻率，这突出了CuN单层膜作为一种高导电二维金属的特性。此外，这种LT能够在高温下使本征电阻率呈现非线性温度依赖性。
