Li Jiaquan, Tu Peng, Yang Qian, Cui Yanjun, Gao Chenyang, Zhou Hui, Lu Jun, Bian Hongxia
College of Science, Gansu Agricultural University, Lanzhou, 730070, People's Republic of China.
School of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou, 730050, People's Republic of China.
Sci Rep. 2024 May 9;14(1):10643. doi: 10.1038/s41598-024-60250-z.
Heterojunctions play a crucial role in improving the absorption of visible light and performance of photocatalysts for organic contaminants degradation in water. In this work, a novel type-II-II AgCO/BiWO (AB) heterojunction was synthesized by hydrothermal reaction and in situ-precipitation methods. The mechanisms of charge transfer and carrier separation at the interface of heterojunctions and the influence on the photocatalytic activity were investigated. The degradation of levofloxacin (LEV) under visible light irradiation was employed to evaluate the photocatalytic performance of AB. The results showed that 85.4% LEV was degraded by AB, which was 1.38 and 1.39 times higher than that of BiWO and AgCO, respectively. The work functions of the different crystal planes in the AB heterojunction, which was calculated by density functional theory, are a significant difference. The Fermi energy (E) of AgCO (- 6.005 eV) is lower than BiWO (- 3.659 eV), but the conduction band (CB) is higher. Therefore, using AB heterojunctions as an example, the research explored the mechanism of type-II-II which CB and E of one semiconductor cannot simultaneously surpass those of another material, based on the built-in electric field theory. Through this analysis, a deeper understanding of type-II heterojunctions was achieved, and providing valuable insights into the behavior of this specific heterojunction system.
异质结在提高可见光吸收以及光催化剂降解水中有机污染物的性能方面起着至关重要的作用。在本工作中,通过水热反应和原位沉淀法合成了一种新型的II-II型AgCO/BiWO(AB)异质结。研究了异质结界面处的电荷转移和载流子分离机制及其对光催化活性的影响。采用左氧氟沙星(LEV)在可见光照射下的降解来评估AB的光催化性能。结果表明,AB对LEV的降解率为85.4%,分别比BiWO和AgCO高1.38倍和1.39倍。通过密度泛函理论计算得出的AB异质结中不同晶面的功函数存在显著差异。AgCO的费米能(E)(-6.005 eV)低于BiWO(-3.659 eV),但其导带(CB)更高。因此,以AB异质结为例,基于内建电场理论研究了一种半导体的CB和E不能同时超过另一种材料的CB和E的II-II型机制。通过该分析,对II型异质结有了更深入的理解,并为该特定异质结系统的行为提供了有价值的见解。