Liu Shanshan, Xu Ke, Li Xingxing, Li Qunxiang, Yang Jinlong
Key Laboratory of Precision and Intelligent Chemistry, University of Science and Technology of China Hefei Anhui 230026 China
Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices, School of Physics and Electronic Engineering, Hubei University of Arts and Science Xiangyang 441053 China
Chem Sci. 2024 Apr 5;15(18):6916-6923. doi: 10.1039/d3sc06636c. eCollection 2024 May 8.
Two-dimensional (2D) nonmagnetic semiconductors with large Rashba-Dresselhaus (R-D) spin splitting at valence or conduction bands are attractive for magnetic-field-free spintronic applications. However, so far, the number of 2D R-D inorganic semiconductors has been quite limited, and the factors that determine R-D spin splitting as well as rational design of giant spin splitting, remain unclear. For this purpose, by exploiting 2D chiral metal-organic frameworks (CMOFs) as a platform, we theoretically develop a three-step screening method to obtain a series of candidate 2D R-D semiconductors with valence band spin splitting up to 97.2 meV and corresponding R-D coupling constants up to 1.37 eV Å. Interestingly, the valence band spin texture is reversible by flipping the chirality of CMOFs. Furthermore, five keys for obtaining giant R-D spin splitting in 2D CMOFs are successfully identified: (i) chirality, (ii) large spin-orbit coupling, (iii) narrow band gap, (iv) valence and conduction bands having the same symmetry at the point, and (v) strong ligand field.
在价带或导带具有大的Rashba-Dresselhaus(R-D)自旋分裂的二维(2D)非磁性半导体对于无磁场自旋电子学应用具有吸引力。然而,到目前为止,二维R-D无机半导体的数量相当有限,决定R-D自旋分裂的因素以及巨自旋分裂的合理设计仍不清楚。为此,通过利用二维手性金属有机框架(CMOFs)作为平台,我们从理论上开发了一种三步筛选方法,以获得一系列候选的二维R-D半导体,其价带自旋分裂高达97.2 meV,相应的R-D耦合常数高达1.37 eV Å。有趣的是,通过翻转CMOFs的手性,价带自旋纹理是可逆的。此外,成功确定了在二维CMOFs中获得巨大R-D自旋分裂的五个关键因素:(i)手性,(ii)大的自旋轨道耦合,(iii)窄带隙,(iv)价带和导带在Γ点具有相同的对称性,以及(v)强配体场。