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应变铁电薄膜中的极性布洛赫点。

Polar Bloch points in strained ferroelectric films.

作者信息

Wang Yu-Jia, Feng Yan-Peng, Tang Yun-Long, Zhu Yin-Lian, Cao Yi, Zou Min-Jie, Geng Wan-Rong, Ma Xiu-Liang

机构信息

Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016, Shenyang, China.

Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China.

出版信息

Nat Commun. 2024 May 10;15(1):3949. doi: 10.1038/s41467-024-48216-1.

Abstract

Topological domain structures have drawn great attention as they have potential applications in future electronic devices. As an important concept linking the quantum and classical magnetism, a magnetic Bloch point, predicted in 1960s but not observed directly so far, is a singular point around which magnetization vectors orient to nearly all directions. Here we show polar Bloch points in tensile-strained ultrathin ferroelectric PbTiO films, which are alternatively visualized by phase-field simulations and aberration-corrected scanning transmission electron microscopic imaging. The phase-field simulations indicate local steady-state negative capacitance around the Bloch points. The observation of polar Bloch points and their emergent properties consequently implies novel applications in future integrated circuits and low power electronic devices.

摘要

拓扑畴结构因其在未来电子器件中的潜在应用而备受关注。作为连接量子磁性和经典磁性的一个重要概念,磁布洛赫点于20世纪60年代被预测,但至今尚未被直接观测到,它是一个奇异点,其周围的磁化矢量几乎指向所有方向。在此,我们展示了拉伸应变超薄铁电PbTiO薄膜中的极性布洛赫点,通过相场模拟和像差校正扫描透射电子显微镜成像交替对其进行了可视化。相场模拟表明布洛赫点周围存在局部稳态负电容。因此,极性布洛赫点及其涌现特性的观测意味着在未来集成电路和低功耗电子器件中的新应用。

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