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具有电荷传输层的镧和锰共掺杂铋铁氧体异质结构的光伏效应

Photovoltaic Effect of La and Mn Co-Doped BiFeO Heterostructure with Charge Transport Layers.

作者信息

Lv Jiwei, Ning Huanpo

机构信息

College of Science, Donghua University, Shanghai 201620, China.

出版信息

Materials (Basel). 2024 Apr 28;17(9):2072. doi: 10.3390/ma17092072.

DOI:10.3390/ma17092072
PMID:38730875
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11084247/
Abstract

Bismuth ferrite BiFeO (BFO)-based ferroelectrics have great potential as inorganic perovskite-like oxides for future solar cells applications due to their unique physical properties. In this work, La and Mn co-doped BFO thin films with compositions BiLa(FeMn)O (x = 0, 0.05, 0.1, 0.15) (denoted as BLF, BLFM5, BLFM10, BLFM15, respectively) were prepared via a sol-gel technique on indium tin oxide (ITO) glass. All the films are monophasic, showing good crystallinity. The optical bandgap E was found to decrease monotonously with an increase in the Mn doping amount. Compared with other compositions, the BLFM5 sample exhibits a better crystallinity and less oxygen vacancies as indicated by XRD and XPS measurements, thereby achieving a better J-V performance. Based on BLFM5 as the light absorbing layer, the ITO/ZnO/BLFM5/Pt and ITO/ZnO/BLFM5/NiO/Pt heterostructure devices were designed and characterized. It was found that the introduction of the ZnO layer increases both the open circuit voltage (V) and the short circuit current density (J) with V = 90.2 mV and J = 6.90 μA/cm for the Pt/ BLFM5/ZnO/ITO device. However, the insertion of the NiO layer reduces both V and J, which is attributed to the weakened built-in electric field at the NiO/BLFM5 interface.

摘要

铋铁氧体BiFeO₃(BFO)基铁电体因其独特的物理性质,作为未来太阳能电池应用的无机钙钛矿型氧化物具有巨大潜力。在本工作中,通过溶胶 - 凝胶技术在氧化铟锡(ITO)玻璃上制备了La和Mn共掺杂的BFO薄膜,其组成为BiLa₁₋ₓFeₓMn₁₋ₓO₃(x = 0, 0.05, 0.1, 0.15)(分别表示为BLF、BLFM5、BLFM10、BLFM15)。所有薄膜均为单相,显示出良好的结晶性。发现光学带隙E随着Mn掺杂量的增加而单调降低。XRD和XPS测量表明,与其他组成相比,BLFM5样品表现出更好的结晶性和更少的氧空位,从而实现了更好的J - V性能。基于BLFM5作为光吸收层,设计并表征了ITO/ZnO/BLFM5/Pt和ITO/ZnO/BLFM5/NiO/Pt异质结构器件。发现引入ZnO层会增加开路电压(V)和短路电流密度(J),对于Pt/BLFM5/ZnO/ITO器件,V = 90.2 mV,J = 6.90 μA/cm²。然而,插入NiO层会降低V和J,这归因于NiO/BLFM5界面处内置电场的减弱。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7ff7/11084247/1073f8749605/materials-17-02072-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7ff7/11084247/02ab1daf03e3/materials-17-02072-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7ff7/11084247/3ba4684ffac3/materials-17-02072-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7ff7/11084247/57254d06b01f/materials-17-02072-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7ff7/11084247/41e0c5a77b68/materials-17-02072-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7ff7/11084247/625ae4bf3c6b/materials-17-02072-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7ff7/11084247/72249faf8056/materials-17-02072-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7ff7/11084247/1073f8749605/materials-17-02072-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7ff7/11084247/02ab1daf03e3/materials-17-02072-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7ff7/11084247/3ba4684ffac3/materials-17-02072-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7ff7/11084247/57254d06b01f/materials-17-02072-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7ff7/11084247/41e0c5a77b68/materials-17-02072-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7ff7/11084247/625ae4bf3c6b/materials-17-02072-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7ff7/11084247/72249faf8056/materials-17-02072-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7ff7/11084247/1073f8749605/materials-17-02072-g007.jpg

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