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金属和金属氧化物前驱体薄膜两步转化为二维过渡金属二硫属化物及异质结构

Two-Step Conversion of Metal and Metal Oxide Precursor Films to 2D Transition Metal Dichalcogenides and Heterostructures.

作者信息

Altvater Michael, Muratore Christopher, Snure Michael, Glavin Nicholas R

机构信息

Air Force Research Laboratory, Materials and Manufacturing Directorate, WPAFB, OH, 45433, USA.

UES Inc., Dayton, OH, 45432, USA.

出版信息

Small. 2025 Jul;21(28):e2400463. doi: 10.1002/smll.202400463. Epub 2024 May 11.

Abstract

The widely studied class of two-dimensional (2D) materials known as transition metal dichalcogenides (TMDs) are now well-poised to be employed in real-world applications ranging from electronic logic and memory devices to gas and biological sensors. Several scalable thin film synthesis techniques have demonstrated nanoscale control of TMD material thickness, morphology, structure, and chemistry and correlated these properties with high-performing, application-specific device metrics. In this review, the particularly versatile two-step conversion (2SC) method of TMD film synthesis is highlighted. The 2SC technique relies on deposition of a solid metal or metal oxide precursor material, followed by a reaction with a chalcogen vapor at an elevated temperature, converting the precursor film to a crystalline TMD. Herein, the variables at each step of the 2SC process including the impact of the precursor film material and deposition technique, the influence of gas composition and temperature during conversion, as well as other factors controlling high-quality 2D TMD synthesis are considered. The specific advantages of the 2SC approach including deposition on diverse substrates, low-temperature processing, orientation control, and heterostructure synthesis, among others, are featured. Finally, emergent opportunities that take advantage of the 2SC approach are discussed to include next-generation electronics, sensing, and optoelectronic devices, as well as catalysis for energy-related applications.

摘要

一类被广泛研究的二维(2D)材料,即过渡金属二硫属化物(TMDs),如今已做好充分准备,可应用于从电子逻辑和存储设备到气体与生物传感器等各种实际应用中。几种可扩展的薄膜合成技术已证明能够对TMD材料的厚度、形态、结构和化学性质进行纳米级控制,并将这些特性与高性能、特定应用的器件指标相关联。在本综述中,重点介绍了TMD薄膜合成中特别通用的两步转换(2SC)方法。2SC技术依赖于固体金属或金属氧化物前驱体材料的沉积,随后在高温下与硫属元素蒸汽反应,将前驱体薄膜转化为结晶TMD。在此,考虑了2SC过程每个步骤中的变量,包括前驱体薄膜材料和沉积技术的影响、转化过程中气体成分和温度的影响,以及控制高质量二维TMD合成的其他因素。还介绍了2SC方法的具体优势,包括在各种衬底上沉积、低温处理、取向控制和异质结构合成等。最后,讨论了利用2SC方法的新机遇,包括下一代电子器件、传感器和光电器件,以及能源相关应用的催化作用。

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