Wu Yingna, Ding Liang, Li Na, Yu Xin
School of Business Administration, Zhongnan University of Economics and Law, Wuhan, China.
Applied Economic Research Center, Jiangxi Institute of Fashion Technology, Nanchang, China.
Sci Rep. 2024 May 14;14(1):11007. doi: 10.1038/s41598-024-61511-7.
In this study, we investigate the influence of global innovation networks (GINs) on the innovation output of semiconductor firms. Utilizing negative binomial regression and network analysis, we assess how network positions, specifically degree, betweenness, and closeness centrality, affect firms' innovation performance, revealing significant positive impacts. Moreover, our results identify a positive U-shaped relationship between structural holes in GINs and innovation performance, suggesting that while moderate network engagement aids innovation, too much can be detrimental. This research provides key insights into optimizing GIN participation for better innovation results in the competitive semiconductor sector.
在本研究中，我们调查了全球创新网络（GINs）对半导体公司创新产出的影响。利用负二项回归和网络分析，我们评估了网络位置，特别是度数、中间中心性和接近中心性，如何影响公司的创新绩效，结果显示出显著的积极影响。此外，我们的研究结果还发现全球创新网络中的结构洞与创新绩效之间存在正U型关系，这表明适度的网络参与有助于创新，但过多参与可能会产生不利影响。本研究为优化全球创新网络参与度以在竞争激烈的半导体行业取得更好的创新成果提供了关键见解。
