Ahmadi Masoud, Atul Atul, de Graaf Sytze, van der Veer Ewout, Meise Ansgar, Tavabi Amir Hossein, Heggen Marc, Dunin-Borkowski Rafal E, Ahmadi Majid, Kooi Bart J
Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands.
Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C), Forschungszentrum Jülich, 52425 Jülich, Germany.
ACS Nano. 2024 May 28;18(21):13496-13505. doi: 10.1021/acsnano.3c10745. Epub 2024 May 16.
Concurrent structural and electronic transformations in VO thin films are of 2-fold importance: enabling fine-tuning of the emergent electrical properties in functional devices, yet creating an intricate interfacial domain structure of transitional phases. Despite the importance of understanding the structure of VO thin films, a detailed real-space atomic structure analysis in which the oxygen atomic columns are also resolved is lacking. Moreover, intermediate atomic structures have remained elusive due to the lack of robust atomically resolved quantitative analysis. Here, we directly resolve both V and O atomic columns and discover the presence of intermediate monoclinic (M2) phase nanolayers (less than 2 nm thick) in epitaxially grown VO films on a TiO (001) substrate, where the dominant part of VO undergoes a transition from the tetragonal (rutile) phase to the monoclinic M1 phase. Strain analysis suggests that the presence of the M2 phase is related to local strain gradients near the TiO/VO interface. We unfold the crucial role of imaging the spatial configurations of the oxygen anions (in addition to V cations) by utilizing atomic-resolution electron microscopy. Our approach can be used to unravel the structural transitions in a wide range of correlated oxides, offering substantial implications for, e.g., optoelectronics and ferroelectrics.
VO薄膜中同时发生的结构和电子转变具有两方面的重要性:既能在功能器件中实现对新兴电学性质的精细调控,又会产生过渡相的复杂界面畴结构。尽管了解VO薄膜的结构很重要,但目前仍缺乏对氧原子列也能分辨的详细实空间原子结构分析。此外,由于缺乏可靠的原子分辨定量分析,中间原子结构一直难以捉摸。在此,我们直接分辨出V和O原子列,并发现了在TiO(001)衬底上外延生长的VO薄膜中存在中间单斜(M2)相纳米层(厚度小于2nm),其中VO的主要部分从四方(金红石)相转变为单斜M1相。应变分析表明,M2相的存在与TiO/VO界面附近的局部应变梯度有关。我们通过利用原子分辨电子显微镜揭示了对氧阴离子(除V阳离子外)空间构型成像的关键作用。我们的方法可用于揭示各种相关氧化物中的结构转变,对例如光电子学和铁电学具有重要意义。