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1T'-ReS₂中精确的晶体取向识别与扭曲诱导的光学各向异性巨调制

Precise Crystal Orientation Identification and Twist-Induced Giant Modulation of Optical Anisotropy in 1T'-ReS.

作者信息

Kong Fanyi, Wang Hu, Tong Yunhao, Zhang Lei, Zhang Yifeng, Han Xue, Liu Kun, Dai Jianxun, Huang Huolin, Sun Changsen, Pan Lujun, Li Dawei

机构信息

School of Optoelectronic Engineering and Instrumentation Science, Dalian University of Technology, Dalian 116024, China.

School of Physics, Dalian University of Technology, Dalian 116024, China.

出版信息

ACS Nano. 2024 May 28;18(21):13899-13909. doi: 10.1021/acsnano.4c03620. Epub 2024 May 17.

DOI:10.1021/acsnano.4c03620
PMID:38757652
Abstract

The ability to precisely identify crystal orientation as well as to nondestructively modulate optical anisotropy in atomically thin rhenium dichalcogenides is critical for the future development of polarization programmable optoelectronic devices, which remains challenging. Here, we report a modified polarized optical imaging (POI) method capable of simultaneously identifying in-plane (Re chain) and out-of-plane (-axis) crystal orientations of the monolayer to few-layer ReS, meanwhile, propose a nondestructive approach to modulate the optical anisotropy in ReS via twist stacking. The results show that parallel and near-cross POI are effective to independently identify the in-plane and out-of-plane crystal orientations, respectively, while regulating the twist angle allows for giant modulation of in-plane optical anisotropy from highly intrinsic anisotropy to complete optical isotropy in the stacked ReS bilayer (with either the same or opposite axes), as well modeled by linear electromagnetic theory. Overall, this study not only develops a simple optical method for precise crystal orientation identification but also offers an efficient light polarization control strategy, which is a big step toward the practical application of anisotropic van der Waals materials in the design of nanophotonic and optoelectronic devices.

摘要

精确识别晶体取向以及无损调制原子级薄的二硫化铼中的光学各向异性的能力,对于偏振可编程光电器件的未来发展至关重要,但这仍然具有挑战性。在此,我们报告了一种改进的偏振光学成像(POI)方法,该方法能够同时识别单层至几层ReS的面内(Re链)和面外(c轴)晶体取向,同时,提出了一种通过扭曲堆叠来无损调制ReS中光学各向异性的方法。结果表明,平行和近交叉POI分别有效地独立识别面内和面外晶体取向,而调节扭曲角可使堆叠的ReS双层(具有相同或相反的轴)中的面内光学各向异性从高度本征各向异性大幅调制到完全光学各向同性,这也由线性电磁理论建模。总体而言,本研究不仅开发了一种用于精确晶体取向识别的简单光学方法,还提供了一种有效的光偏振控制策略,这朝着各向异性范德华材料在纳米光子和光电器件设计中的实际应用迈出了一大步。

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