Han Qingchen, Zong Peng-An, Liu Heng, Zhang Ziming, Shen Kelin, Liu Miao, Mao Zhendong, Song Qingfeng, Bai Shengqiang
College of Materials Science and Engineering, Nanjing Tech University, Nanjing 210009, China.
State Key Laboratory of High-Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China.
ACS Appl Mater Interfaces. 2024 May 29;16(21):27541-27549. doi: 10.1021/acsami.4c03307. Epub 2024 May 17.
Thermoelectric cooling devices utilizing BiTe-based alloys have seen increased utilization in recent years. However, their thermoelectric performance remains inadequate within the operational temperature range (≤400 K), with limited research addressing this issue. In this study, we successfully modulated the carrier concentration of the sample through Te content reduction, consequently lowering the peak temperature of the value from 400 to 300 K. This led to a substantial enhancement in thermoelectric performance at room temperature (≤400 K). Furthermore, by doping with La, the electrical transport properties have been further optimized, and the lattice thermal conductivity has been effectively reduced at the same time; the average value was ultimately elevated from 0.69 to 0.9 within the temperature range of 300-400 K. These findings hold significant promise for enhancing the efficacy of existing thermoelectric cooling devices based on BiTe-based alloys.
近年来，利用基于BiTe合金的热电冷却装置的应用有所增加。然而，在工作温度范围（≤400K）内，它们的热电性能仍然不足，针对这一问题的研究有限。在本研究中，我们通过降低Te含量成功调节了样品的载流子浓度，从而将 值的峰值温度从400K降低到300K。这导致室温（≤400K）下热电性能大幅提高。此外，通过掺杂La，进一步优化了电输运性能，同时有效降低了晶格热导率；在300 - 400K温度范围内，平均 值最终从0.69提高到0.9。这些发现对于提高现有基于BiTe合金的热电冷却装置的效能具有重要意义。
