Dikicioǧlu Elanur, Balı M Burcu, Saǧlam Semran, Berberoǧlu Halil, Pavlov Ihor, Goodarzi Arian, Orhan Elif
Vocational School of Health Services, Yüksek İhtisas University, 06291 Ankara, Turkey.
Faculty of Science, Department of Physics, Gazi University, 06500 Ankara, Turkey.
ACS Omega. 2024 May 2;9(19):21346-21352. doi: 10.1021/acsomega.4c01585. eCollection 2024 May 14.
Heterojunction formation is the key to adjusting the electronic and optoelectronic properties of various semiconductor devices. There have been various reports on the formation and importance of semiconducting heterojunction devices based on metal oxides. Titanium dioxide (TiO) is one of the metal oxides that has many unique properties. TiO's importance is due to its physical and chemical properties such as large band gap, large permittivity, stability, and low leakage current density. In this context, we present the electrical properties of the metal-insulator-semiconductor (MIS) type-TiO-based Schottky barrier diode (SBD) in the study. To create a thin layer of TiO on ( Si) patterned partially by the laser-induced periodic surface structure (LIPSS) technique, an atomic layer deposition (ALD) technique was used in the study. For comparison, the current-voltage (-) characteristics of the TiO-based laser-patterned (LP) and nonlaser-patterned (non-LP) diodes were measured at 300 K and in the dark at ±5 V. Classical thermionic emission (TE) theory and Cheung functions were used to investigate the critical diode parameters of the diodes, including ideality factor (), series resistance (), and barrier height (Φ). The values were obtained as 4.10 and 3.68 from the TE method and Cheung functions for the LP diode, respectively. The Φ values were found as 0.68 and 0.69 eV from the TE method and Cheung functions, respectively. According to experimental results, the laser patterning resulted in an increase in the Φ values and a decrease in the values. After laser patterning, it was observed that the device worked effectively, and the ideality factor and barrier height values were improved. This study provides insight into the fabrication and electrical properties of TiO-based heterojunction devices.
异质结的形成是调整各种半导体器件电子和光电特性的关键。关于基于金属氧化物的半导体异质结器件的形成及其重要性已有诸多报道。二氧化钛（TiO₂）是具有许多独特性质的金属氧化物之一。TiO₂的重要性源于其诸如大带隙、高介电常数、稳定性和低漏电流密度等物理和化学性质。在此背景下，我们在本研究中展示了金属 - 绝缘体 - 半导体（MIS）型基于TiO₂的肖特基势垒二极管（SBD）的电学性质。为了在通过激光诱导周期性表面结构（LIPSS）技术部分图案化的（Si）上形成一层TiO₂薄膜，本研究采用了原子层沉积（ALD）技术。为作比较，在300 K且黑暗环境下于±5 V测量了基于TiO₂的激光图案化（LP）和非激光图案化（非LP）二极管的电流 - 电压（I - V）特性。使用经典热电子发射（TE）理论和张函数来研究二极管的关键参数，包括理想因子（n）、串联电阻（Rs）和势垒高度（ΦB）。从TE方法和张函数分别得到LP二极管的n值为4.10和3.68。从TE方法和张函数分别得到的ΦB值为0.68和0.69 eV。根据实验结果，激光图案化导致ΦB值增加而n值减小。激光图案化后，观察到器件有效工作，且理想因子和势垒高度值得到改善。本研究为基于TiO₂的异质结器件的制造和电学性质提供了深入见解。
