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有机半导体的按需催化n型掺杂

On-Demand Catalysed n-Doping of Organic Semiconductors.

作者信息

Stoeckel Marc-Antoine, Feng Kui, Yang Chi-Yuan, Liu Xianjie, Li Qifan, Liu Tiefeng, Jeong Sang Young, Woo Han Young, Yao Yao, Fahlman Mats, Marks Tobin J, Sharma Sakshi, Motta Alessandro, Guo Xugang, Fabiano Simone, Facchetti Antonio

机构信息

Wallenberg Initiative Materials Science for Sustainability, ITN, Linköping University, SE-60174, Norrköping, Sweden.

n-ink AB, Bredgatan 33, SE-60221, Norrköping, Sweden.

出版信息

Angew Chem Int Ed Engl. 2024 Aug 12;63(33):e202407273. doi: 10.1002/anie.202407273. Epub 2024 Jul 10.

DOI:10.1002/anie.202407273
PMID:38770935
Abstract

A new approach to control the n-doping reaction of organic semiconductors is reported using surface-functionalized gold nanoparticles (f-AuNPs) with alkylthiols acting as the catalyst only upon mild thermal activation. To demonstrate the versatility of this methodology, the reaction of the n-type dopant precursor N-DMBI-H with several molecular and polymeric semiconductors at different temperatures with/without f-AuNPs, vis-à-vis the unfunctionalized catalyst AuNPs, was investigated by spectroscopic, morphological, charge transport, and kinetic measurements as well as, computationally, the thermodynamic of catalyst activation. The combined experimental and theoretical data demonstrate that while f-AuNPs is inactive at room temperature both in solution and in the solid state, catalyst activation occurs rapidly at mild temperatures (70 °C) and the doping reaction completes in few seconds affording large electrical conductivities (10-140 S cm). The implementation of this methodology enables the use of semiconductor+dopant+catalyst solutions and will broaden the use of the corresponding n-doped films in opto-electronic devices such as thin-film transistors, electrochemical transistors, solar cells, and thermoelectrics well as guide the design of new catalysts.

摘要

报道了一种控制有机半导体n型掺杂反应的新方法,该方法使用表面功能化的金纳米颗粒(f-AuNPs),其中烷基硫醇仅在温和的热活化条件下充当催化剂。为了证明该方法的通用性,通过光谱、形态、电荷传输和动力学测量以及催化剂活化热力学的计算研究,考察了n型掺杂前驱体N-DMBI-H与几种分子和聚合物半导体在不同温度下、有/无f-AuNPs时相对于未功能化催化剂AuNPs的反应。实验和理论数据相结合表明,虽然f-AuNPs在室温下在溶液和固态中均无活性,但在温和温度(约70°C)下催化剂迅速活化,掺杂反应在几秒钟内完成,得到高电导率(约10-140 S cm)。该方法的实施使得能够使用半导体+掺杂剂+催化剂溶液,并将拓宽相应n掺杂薄膜在薄膜晶体管、电化学晶体管、太阳能电池和热电等光电器件中的应用,同时指导新型催化剂的设计。

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