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三氯氢硅气流和预蚀刻对4H-碳化硅同质外延生长的影响。

Effect of TCS gas flow and pre-etching on homopitaxial growth of 4H-SiC.

作者信息

Guo Ning, Pei Yicheng, Yuan Weilong, Li Yunkai, Zhao Siqi, Yang Shangyu, Zhang Yang, Liu Xingfang

机构信息

Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences Beijing 100083 People's Republic of China

Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences Beijing 100049 People's Republic of China

出版信息

RSC Adv. 2024 May 22;14(23):16574-16583. doi: 10.1039/d4ra02563f. eCollection 2024 May 15.

DOI:10.1039/d4ra02563f
PMID:38779386
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11110024/
Abstract

In this study, the epitaxial growth of 6-inch n-type 4° off-axis -face substrates using a horizontal hot-wall LPCVD system was investigated. The study explored the epitaxial growth under different source gas flow rates, growth pressures, and pre-etching times, with particular emphasis on their effects on epitaxial growth rate, epitaxial layer thickness uniformity, doping concentration and uniformity, and epitaxial layer surface roughness. The observation was made that the increase in source gas flow rate led to variations in dopant concentration due to different transport models between nitrogen gas and source gas. Additionally, with the increase in etching time, overetching phenomena occurred, resulting in changes in both dopant concentration and uniformity. Furthermore, the relationships between these three factors and their corresponding indicators were explained by combining the CVD growth process with the laminar flow model. These observed patterns are beneficial for further optimizing growth conditions in industrial settings, ultimately enhancing the quality of the growth process.

摘要

在本研究中，使用卧式热壁LPCVD系统对6英寸n型4°离轴面衬底的外延生长进行了研究。该研究探索了在不同源气体流速、生长压力和预蚀刻时间下的外延生长情况，特别强调了它们对外延生长速率、外延层厚度均匀性、掺杂浓度和均匀性以及外延层表面粗糙度的影响。观察到源气体流速的增加由于氮气和源气体之间不同的传输模型导致掺杂剂浓度发生变化。此外，随着蚀刻时间的增加，出现了过蚀刻现象，导致掺杂剂浓度和均匀性都发生了变化。此外，通过将CVD生长过程与层流模型相结合，解释了这三个因素与其相应指标之间的关系。这些观察到的模式有利于在工业环境中进一步优化生长条件，最终提高生长过程的质量。

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本文引用的文献

1
CFD simulation of CVD reactors in the CHSiCl(MTS)/H system using a two-step MTS decomposition and one-step SiC growth models.使用两步法MTS分解和一步法SiC生长模型对CHSiCl（MTS）/H系统中的CVD反应器进行CFD模拟。
Heliyon. 2023 Mar 31;9(4):e15061. doi: 10.1016/j.heliyon.2023.e15061. eCollection 2023 Apr.
2
Defect Inspection Techniques in SiC.碳化硅中的缺陷检测技术
Nanoscale Res Lett. 2022 Mar 4;17(1):30. doi: 10.1186/s11671-022-03672-w.
3
Rapid Chemical Vapor Infiltration of Silicon Carbide Minicomposites at Atmospheric Pressure.
常压下碳化硅小型复合材料的快速化学气相渗透。
ACS Appl Mater Interfaces. 2018 Feb 7;10(5):4986-4992. doi: 10.1021/acsami.7b17098. Epub 2018 Jan 27.