Yang Shangyu, Guo Ning, Zhao Siqi, Li Yunkai, Wei Moyu, Zhang Yang, Liu Xingfang
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China.
Materials (Basel). 2024 May 29;17(11):2612. doi: 10.3390/ma17112612.
In this study, we systematically explore the impact of C/Si ratio, pre-carbonization time, H etching time, and growth pressure on the buffer layer and subsequent epitaxial layer of 6-inch 4H-SiC wafers. Our findings indicate that the buffer layer's C/Si ratio and growth pressure significantly influence the overall quality of the epitaxial wafer. Specifically, an optimal C/Si ratio of 0.5 and a growth pressure of 70 Torr yield higher-quality epitaxial layers. Additionally, the pre-carbonization time and H etching time primarily affect the uniformity and surface quality of the epitaxial wafer, with a pre-carbonization time of 3 s and an H etching time of 3 min found to enhance the surface quality of the epitaxial layer.
在本研究中，我们系统地探究了碳硅比、预碳化时间、氢蚀刻时间和生长压力对6英寸4H-SiC晶圆的缓冲层及后续外延层的影响。我们的研究结果表明，缓冲层的碳硅比和生长压力对外延晶圆的整体质量有显著影响。具体而言，最佳碳硅比为0.5，生长压力为70托时可得到质量更高的外延层。此外，预碳化时间和氢蚀刻时间主要影响外延晶圆的均匀性和表面质量，发现预碳化时间为3秒、氢蚀刻时间为3分钟可提高外延层的表面质量。
