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一种羰基修饰的二维聚合物,用作具有高耐久性和宽存储窗口的非易失性存储器件的电荷俘获层。

A carbonyl-decorated two-dimensional polymer as a charge-trapping layer for non-volatile memory storage devices with a high endurance and wide memory window.

作者信息

Al-Ajeil Ruba, Mohammed Abdul Khayum, Pal Pratibha, Addicoat Matthew A, Nair Surabhi Suresh, Kumar Dayanand, Syed Abdul Momin, Rezk Ayman, Singh Nirpendra, Nayfeh Ammar, El-Atab Nazek, Shetty Dinesh

机构信息

Department of Chemistry, Khalifa University of Science and Technology, PO Box: 127788, Abu Dhabi, United Arab Emirates.

Smart, Advanced Memory Devices and Applications (SAMA) Laboratory, Electrical and Computer Engineering Program, Computer Electrical Mathematical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), 23955 Thuwal, Kingdom of Saudi Arabia.

出版信息

Mater Horiz. 2024 Aug 12;11(16):3878-3884. doi: 10.1039/d4mh00201f.

Abstract

The charge-trapping mechanism in conjugated polymers is a performance obstacle in many optoelectronic devices harnessed for non-volatile memory applications. Herein, a carbonyl-decorated organic 2D-polymer (TpDb)-based charge-trapping memory device has been developed with a wide memory window (3.2 V) with low programming and erasing voltages of +3/-2 and -3/+2. The TpDb was synthesized by a potentially scalable solid-state aldol condensation reaction. The inherent structural defects and the semi-conjugated nature of the enone network in TpDb offer effective charge-trapping through the localization of charges in specific functional groups (CO). The interlayer hydrogen bonding enhances the packing density of the 2D-polymer layers thereby improving the memory storage properties of the material. Furthermore, the TpDb exhibits excellent features for non-volatile memory applications including over 10 000 cycles of write/read endurance and a prolonged retention performance of 10 seconds at high temperatures (100 °C).

摘要

共轭聚合物中的电荷俘获机制是许多用于非易失性存储应用的光电器件中的性能障碍。在此,基于羰基修饰的有机二维聚合物(TpDb)开发了一种电荷俘获存储器件,其具有3.2 V的宽存储窗口,编程和擦除电压低至+3/-2和-3/+2。TpDb是通过潜在可扩展的固态羟醛缩合反应合成的。TpDb中烯酮网络的固有结构缺陷和半共轭性质通过电荷在特定官能团(CO)中的定位提供了有效的电荷俘获。层间氢键增强了二维聚合物层的堆积密度,从而改善了材料的存储性能。此外,TpDb在非易失性存储应用中表现出优异的特性,包括超过10000次的写/读耐久性循环以及在高温(100°C)下10秒的延长保持性能。

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