Li Qingyan, Li Tengteng, Zhang Yating, Zhao Hongliang, Li Jie, Yao Jianquan
Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072, China.
Nanoscale. 2021 Feb 11;13(5):3295-3303. doi: 10.1039/d0nr09066b.
Optoelectronic memories based on organic field-effect transistors (OFETs) have been extensively investigated, and great progress has been made in improving memory performance and reducing operating power consumption. Despite these achievements, optoelectronic memories reported so far have only a single storage function, such as light-assisted memory, light writing memory, or light-erasing memory, which may not meet the requirements of multi-functional storage in the future. Here, the dual-functional optoelectronic memories are demonstrated by employing ternary hybrid films as floating gate layers. Integrating the advantages of hole trapping in [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and photoinduced electron trapping in CsPbBr3 quantum dots (QDs), the dual-functional storages including electric programming holes and light programming electrons can be realized in one device. Owing to the complementary charge trapping advantages in CsPbBr3 QDs and PCBM, the devices also show a short light erasing time of 0.05 s and low erasing gate bias within -35 V. In addition, the devices exhibit decent endurance for 500 continuous light programming-reading-electric programming-reading cycling tests and admirable electron and hole retention time of 10 000 s with negligible charge leakage. This study may offer a feasible path for the development of new-generation memory.
基于有机场效应晶体管（OFET）的光电存储器已得到广泛研究，并且在提高存储性能和降低工作功耗方面取得了巨大进展。尽管取得了这些成就，但迄今为止报道的光电存储器仅具有单一存储功能，如光辅助存储、光写入存储或光擦除存储，这可能无法满足未来多功能存储的需求。在此，通过采用三元混合薄膜作为浮栅层来展示双功能光电存储器。结合[6,6]-苯基-C61-丁酸甲酯（PCBM）中的空穴俘获优势和CsPbBr3量子点（QD）中的光致电子俘获优势，在一个器件中可以实现包括电编程空穴和光编程电子的双功能存储。由于CsPbBr3量子点和PCBM中互补的电荷俘获优势，这些器件还表现出0.05秒的短光擦除时间和-35 V以内的低擦除栅极偏压。此外，这些器件在500次连续的光编程-读取-电编程-读取循环测试中表现出良好的耐久性，并且在电荷泄漏可忽略不计的情况下，电子和空穴保留时间长达10000秒。这项研究可能为新一代存储器的发展提供一条可行的途径。
