Physical Sciences and Engineering Division and ‡Computer, Electrical and Mathematical Sciences & Engineering Division, King Abdullah University of Science & Technology (KAUST) , Thuwal 23955-6900, Saudi Arabia.
ACS Appl Mater Interfaces. 2017 Jul 5;9(26):21856-21863. doi: 10.1021/acsami.7b03078. Epub 2017 Jun 22.
We report reproducible multibit transparent flash memory in which a single solution-derived TaO layer is used simultaneously as a charge-trapping layer and a tunneling layer. This is different from conventional flash memory cells where two different dielectric layers are typically used. Under optimized programming/erasing operations, the memory device shows excellent programmable memory characteristics with a maximum memory window of ∼10.7 V. Moreover, the flash memory device shows a stable 2-bit memory performance and good reliability, including data retention for more than 10 s and endurance performance for more than 100 cycles. The use of a common charge-trapping and tunneling layer can simplify the fabrication of advanced flash memories.
我们报告了可重复的多态透明闪存，其中单个溶液衍生的 TaO 层同时用作电荷俘获层和隧穿层。这与传统的闪存单元不同，传统的闪存单元通常使用两个不同的介电层。在优化的编程/擦除操作下，该存储器件显示出优异的可编程存储特性，最大存储窗口约为 10.7V。此外，闪存器件具有稳定的 2 位存储性能和良好的可靠性，包括超过 10 秒的数据保持时间和超过 100 个循环的耐用性性能。使用公共的电荷俘获和隧穿层可以简化先进闪存的制造。
