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纳米片二维硫族化物范德华异质结构中的可调谐局域电荷转移激子

Tunable Localized Charge Transfer Excitons in Nanoplatelet-2D Chalcogenide van der Waals Heterostructures.

作者信息

Rahaman Mahfujur, Marino Emanuele, Joly Alan G, Stevens Christopher E, Song Seunguk, Alfieri Adam, Jiang Zhiqiao, O'Callahan Brian T, Rosen Daniel J, Jo Kiyoung, Kim Gwangwoo, Hendrickson Joshua R, El-Khoury Patrick Z, Murray Christopher, Jariwala Deep

机构信息

Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.

Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.

出版信息

ACS Nano. 2024 Jun 11;18(23):15185-15193. doi: 10.1021/acsnano.4c03260. Epub 2024 May 29.

Abstract

Observation of interlayer, charge transfer (CT) excitons in van der Waals heterostructures (vdWHs) based on 2D-2D systems has been well investigated. While conceptually interesting, these charge transfer excitons are highly delocalized and spatially localizing them requires twisting layers at very specific angles. This issue of localizing the CT excitons can be overcome via making nanoplate-2D material heterostructures (N2DHs) where one of the components is a spatially quantum confined medium. Here, we demonstrate the formation of CT excitons in a mixed dimensional system comprising MoSe and WSe monolayers and CdSe/CdS-based core/shell nanoplates (NPLs). Spectral signatures of CT excitons in our N2DHs were resolved locally at the 2D/single-NPL heterointerface using tip-enhanced photoluminescence (TEPL) at room temperature. By varying both the 2D material and the shell thickness of the NPLs and applying an out-of-plane electric field, the exciton resonance energy was tuned by up to 100 meV. Our finding is a significant step toward the realization of highly tunable N2DH-based next-generation photonic devices.

摘要

基于二维-二维体系的范德华异质结构(vdWHs)中层间电荷转移(CT)激子的观测已得到充分研究。虽然从概念上讲很有趣,但这些电荷转移激子高度离域,要在空间上对其进行定位需要以非常特定的角度扭曲层。通过制备纳米片-二维材料异质结构(N2DHs),其中一个组分是空间量子受限介质,可以克服电荷转移激子的定位问题。在此,我们展示了在由MoSe和WSe单层以及基于CdSe/CdS的核/壳纳米片(NPLs)组成的混合维度体系中CT激子的形成。在室温下,利用针尖增强光致发光(TEPL)在二维/单纳米片异质界面处局部解析了我们的N2DHs中CT激子的光谱特征。通过改变二维材料和纳米片的壳层厚度,并施加面外电场,激子共振能量可调节高达100毫电子伏特。我们的发现朝着实现基于N2DHs的高度可调谐下一代光子器件迈出了重要一步。

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