Madampadi Roshni, Patel Avit Bhogilal, Vinod C P, Gupta Ritu, Jagadeesan Dinesh
Department of Chemistry, Indian Institute of Technology Palakkad Kerala 678 623 India
Department of Chemistry, Indian Institute of Technology Jodhpur Jodhpur 342037 India.
Nanoscale Adv. 2024 Apr 22;6(11):2813-2822. doi: 10.1039/d4na00141a. eCollection 2024 May 29.
Electrocatalysts containing a Ni/NiO/N-doped graphene interface have been synthesised using the ligand-assisted chemical vapor deposition technique. NiO nanoparticles were used as the substrate to grow N-doped graphene by decomposing vapours of benzene and N-containing ligands. The method was demonstrated with two nitrogen-containing ligands, namely dipyrazino[2,3-:2',3'-]quinoxaline-2,3,6,7,10,11-hexacarbonitrile (L) and melamine (M). The structure and composition of the as-synthesized composites were characterized by XRD, Raman spectroscopy, SEM, TEM and XPS. The composite prepared using the ligand L had NiO sandwiched between Ni and N-doped graphene and showed an overpotential of 292 mV at 10 mA cm and a Tafel slope of 45.41 mV dec for the OER, which is comparable to the existing noble metal catalysts. The composite prepared using the ligand M had Ni encapsulated by N-doped graphene without NiO. It showed an overpotential of 390 mV at 10 mA cm and a Tafel slope of 78.9 mV dec. The ligand-assisted CVD route demonstrates a facile route to control the microstructure of the electrocatalysts.
采用配体辅助化学气相沉积技术合成了含有Ni/NiO/N掺杂石墨烯界面的电催化剂。以NiO纳米颗粒为基底，通过分解苯和含氮配体的蒸气来生长N掺杂石墨烯。该方法通过两种含氮配体进行了验证，即二吡嗪并[2,3 -:2',3'-]喹喔啉-2,3,6,7,10,11-六腈（L）和三聚氰胺（M）。采用XRD、拉曼光谱、SEM、TEM和XPS对合成的复合材料的结构和组成进行了表征。使用配体L制备的复合材料中，NiO夹在Ni和N掺杂石墨烯之间，在10 mA cm时的过电位为292 mV，OER的塔菲尔斜率为45.41 mV dec，与现有的贵金属催化剂相当。使用配体M制备的复合材料中，Ni被N掺杂石墨烯包裹，没有NiO。它在10 mA cm时的过电位为390 mV，塔菲尔斜率为78.9 mV dec。配体辅助CVD路线展示了一种控制电催化剂微观结构的简便方法。
