van de Putte Marijn W, Polishchuk Dmytro, Gauquelin Nicolas, Verbeeck Johan, Koster Gertjan, Huijben Mark
MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, Netherlands.
Institute of Magnetism of the National Academy of Sciences of Ukraine and Ministry of Education and Science of Ukraine, 03142 Kyiv, Ukraine.
ACS Appl Electron Mater. 2024 Apr 18;6(5):3695-3703. doi: 10.1021/acsaelm.4c00371. eCollection 2024 May 28.
Perpendicular magnetic anisotropy forms the foundation of the current data storage technology. However, there is an ever-increasing demand for higher density data storage, faster read-write access times, and lower power consuming storage devices, which requires new materials to reduce the switching current, improve bit-to-bit distributions, and improve reliability of writing with scalability below 10 nm. Here, vertically aligned nanocomposites (VANs) composed of self-assembled ferromagnetic LaSrMnO (LSMO) nanopillars in a surrounding ZnO matrix are investigated for controllable magnetic anisotropy. Confinement of LSMO into nanopillar dimensions down to 15 nm in such VAN films aligns the magnetic easy axis along the out-of-plane (i.e., perpendicular) direction, in strong contrast to the typical in-plane easy axis for strained, phase pure LSMO thin films. The dominant contribution to the magnetic anisotropy in these (LSMO)(ZnO) VAN films comes from the shape of the nanopillars, while the epitaxial strain at the vertical LSMO:ZnO interfaces exhibits a negligible effect. These VAN films with their large, out-of-plane remnant magnetization of 2.6 μB/Mn and bit density of 0.77 Tbits/inch offer an interesting strategy for enhanced data storage applications.
垂直磁各向异性构成了当前数据存储技术的基础。然而,对于更高密度的数据存储、更快的读写访问时间以及更低功耗的存储设备的需求不断增加,这就需要新材料来降低开关电流、改善位与位之间的分布,并提高写入的可靠性,同时实现低于10纳米的可扩展性。在此,对由自组装铁磁LaSrMnO(LSMO)纳米柱在周围ZnO基体中组成的垂直排列纳米复合材料(VAN)进行了可控磁各向异性的研究。在这种VAN薄膜中,将LSMO限制在低至15纳米的纳米柱尺寸内,使磁易轴沿面外(即垂直)方向排列,这与应变的、相纯的LSMO薄膜典型的面内易轴形成强烈对比。在这些(LSMO)(ZnO)VAN薄膜中,对磁各向异性的主要贡献来自纳米柱的形状,而垂直的LSMO:ZnO界面处的外延应变的影响可忽略不计。这些VAN薄膜具有2.6 μB/Mn的大的面外剩余磁化强度和0.77 Tbits/英寸的位密度,为增强数据存储应用提供了一种有趣的策略。