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层状半导体中相互作用电荷密度波的共存

Coexistence of Interacting Charge Density Waves in a Layered Semiconductor.

作者信息

Lv B Q, Zong Alfred, Wu Dong, Nie Zhengwei, Su Yifan, Choi Dongsung, Ilyas Batyr, Fichera Bryan T, Li Jiarui, Baldini Edoardo, Mogi Masataka, Huang Y-B, Po Hoi Chun, Meng Sheng, Wang Yao, Wang N L, Gedik Nuh

机构信息

Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai 200240, China.

Massachusetts Institute of Technology, Department of Physics, Cambridge, Massachusetts 02139, USA.

出版信息

Phys Rev Lett. 2024 May 17;132(20):206401. doi: 10.1103/PhysRevLett.132.206401.

Abstract

Coexisting orders are key features of strongly correlated materials and underlie many intriguing phenomena from unconventional superconductivity to topological orders. Here, we report the coexistence of two interacting charge-density-wave (CDW) orders in EuTe_{4}, a layered crystal that has drawn considerable attention owing to its anomalous thermal hysteresis and a semiconducting CDW state despite the absence of perfect Fermi surface nesting. By accessing unoccupied conduction bands with time- and angle-resolved photoemission measurements, we find that monolayers and bilayers of Te in the unit cell host different CDWs that are associated with distinct energy gaps. The two gaps display dichotomous evolutions following photoexcitation, where the larger bilayer CDW gap exhibits less renormalization and faster recovery. Surprisingly, the CDW in the Te monolayer displays an additional momentum-dependent gap renormalization that cannot be captured by density-functional theory calculations. This phenomenon is attributed to interlayer interactions between the two CDW orders, which account for the semiconducting nature of the equilibrium state. Our findings not only offer microscopic insights into the correlated ground state of EuTe_{4} but also provide a general nonequilibrium approach to understand coexisting, layer-dependent orders in a complex system.

摘要

共存序是强关联材料的关键特征,是许多有趣现象的基础,从非常规超导到拓扑序。在此,我们报道了在EuTe₄中两种相互作用的电荷密度波(CDW)序的共存,EuTe₄是一种层状晶体,因其异常的热滞回以及尽管没有完美的费米面嵌套却存在半导体CDW态而备受关注。通过时间和角度分辨光电子能谱测量来探测未占据的导带,我们发现晶胞中的单层和双层Te承载着与不同能隙相关的不同CDW。这两个能隙在光激发后呈现出二分演化,其中较大的双层CDW能隙表现出较小的重整化和更快的恢复。令人惊讶的是,Te单层中的CDW表现出一种额外的与动量相关的能隙重整化,这是密度泛函理论计算无法捕捉到的。这种现象归因于两个CDW序之间的层间相互作用,这解释了平衡态的半导体性质。我们的发现不仅为EuTe₄的关联基态提供了微观见解,还提供了一种通用的非平衡方法来理解复杂系统中共存的、依赖于层的序。

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