Kalem Seref
Department of Electrical and Electronics Engineering, Faculty of Engineering and Natural Sciences, Bahcesehir University, 34353, Besiktas, Istanbul, Turkey.
Sci Rep. 2024 Jun 3;14(1):12730. doi: 10.1038/s41598-024-63377-1.
The silicon suboxide SiOx (x < 2.0) offers promising industrial application possibilities ranging from electrodes in lithium-ion batteries, which are used widely in electrical vehicles and portable devices to sensing applications. Therefore, a low cost, environmental friendly and high performance silicon oxide materials are required for an appropriate operation of any electronic gadget. In this work, we report on the physical and electrical properties of a suboxide layer of up to 1 μm, which was grown on silicon during the formation of a dielectric layer, namely the ammonium silicon hexafluoride. It is a stable oxide exhibiting light emission from 400 to 1700 nm offering scalable and cost-effective large area processing capability. The measurement results reveal interesting properties, which are required to be understood clearly before proceeding with any suitable application. The results have been analyzed using state-of-the-art physical and electrical characterization techniques such as ellipsometry, AFM, SEM, FTIR, photoluminescence lifetime and resistive switching measurements to determine structural, optical and electrical properties. At 300 K the carrier lifetime measurements reveal the lifetime values ranging from about few tens of picosecond up to 4500 picoseconds. Scanning probe analysis indicate a surface roughness of about 30 Å. Resistive memory forming was observed also in these layers at relatively low power thresholds. We provide a comprehensive description of the physical and electrical properties in order to clarify the origin of the observed features. The wavelength dependent real and the imaginary dielectric functions provided useful insights on optical properties. A lookout is given for the possible applications of this special SiOx dielectric oxide layer.
一氧化硅SiOx（x < 2.0）具有广阔的工业应用前景，涵盖从广泛应用于电动汽车和便携式设备的锂离子电池电极到传感应用等领域。因此，任何电子设备的正常运行都需要低成本、环保且高性能的氧化硅材料。在这项工作中，我们报告了在介电层（即六氟硅酸铵）形成过程中在硅上生长的厚度达1μm的一氧化硅层的物理和电学性质。它是一种稳定的氧化物，在400至1700nm范围内发光，具有可扩展且经济高效的大面积加工能力。测量结果揭示了一些有趣的性质，在进行任何合适的应用之前都需要清楚地了解这些性质。已使用椭圆偏振仪、原子力显微镜、扫描电子显微镜、傅里叶变换红外光谱仪、光致发光寿命和电阻开关测量等先进的物理和电学表征技术对结果进行分析，以确定其结构、光学和电学性质。在300K时，载流子寿命测量结果显示寿命值范围从几十皮秒到4500皮秒。扫描探针分析表明表面粗糙度约为30 Å。在这些层中还观察到在相对较低的功率阈值下形成电阻记忆。我们对物理和电学性质进行了全面描述，以阐明观察到的特征的起源。与波长相关的实部和虚部介电函数为光学性质提供了有用的见解。展望了这种特殊的SiOx介电氧化物层的可能应用。
