Department of Electrical & Electronic Engineering, University College London, Torrington Place, London, WC1E 7JE, UK.
Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, #08-03, Singapore, 138634, Singapore.
Sci Rep. 2017 Aug 24;7(1):9274. doi: 10.1038/s41598-017-09565-8.
We studied intrinsic resistance switching behaviour in sputter-deposited amorphous silicon suboxide (a-SiO ) films with varying degrees of roughness at the oxide-electrode interface. By combining electrical probing measurements, atomic force microscopy (AFM), and scanning transmission electron microscopy (STEM), we observe that devices with rougher oxide-electrode interfaces exhibit lower electroforming voltages and more reliable switching behaviour. We show that rougher interfaces are consistent with enhanced columnar microstructure in the oxide layer. Our results suggest that columnar microstructure in the oxide will be a key factor to consider for the optimization of future SiOx-based resistance random access memory.
我们研究了具有不同氧化层-电极界面粗糙度的溅射沉积非晶硅亚氧化物(a-SiO)薄膜中的本征电阻开关行为。通过结合电学探测测量、原子力显微镜(AFM)和扫描透射电子显微镜(STEM)，我们观察到具有更粗糙氧化层-电极界面的器件具有更低的电成型电压和更可靠的开关行为。我们表明，更粗糙的界面与氧化层中增强的柱状微结构一致。我们的结果表明，氧化层中的柱状微结构将是优化未来基于 SiOx 的电阻随机存取存储器的一个关键因素。
