Shen Tao, Liu Di, Zhang Jianqi, Wei Zhixiang, Wang Yang
State Key Laboratory of Molecular Engineering of Polymers, Department of Materials Science, Fudan University, Songhu Road 2005, Shanghai, 200438, China.
Laboratory of Advanced Materials, Fudan University, Songhu Road 2005, Shanghai, 200438, China.
Angew Chem Int Ed Engl. 2024 Aug 26;63(35):e202409018. doi: 10.1002/anie.202409018. Epub 2024 Jul 22.
Conjugated polymers are emerging as competitive candidates for organic thermoelectrics (OTEs). However, to make the device truly pervasive, both p- and n-type conjugated polymers are essential. Despite great efforts, no n-type equivalents to the p-type benchmark PEDOT:PSS exist to date mainly due to the low electrical conductivity (σ). Herein, a near-amorphous n-type conjugated polymer, namely pDFSe, is reported with high σ by achieving the synergy between charge transport and doping efficiency. The polymer pDFSe is synthesized based on an acceptor-triad moiety of diketopyrrolopyrrole-difluorobenzoselenadiazole-diketopyrrolopyrrole (DFSe), which has the noncovalently-fused-ring structure to reinforce the backbone rigidity. Furthermore, an axisymmetric thiophene-selenophene-thiophene donor is introduced, which enables the formation of near-amorphous microstructures. The above merits ensure good doping efficiency without scarifying efficient intrachain charge-carrier transport. Thus, pDFSe-based n-type transistors exhibit high electron mobility up to 6.15 cm V s, much higher than its reference polymer pDSe without the noncovalently-fused-ring structure (0.77 cm V s). Further upon n-doping, pDFSe demonstrates excellent σ of 62.6 S cm and maximum power factor of 133.1 μW m K, which are among the highest values reported for solution-processed n-type polymers. The results demonstrate the great potential of near-amorphous n-type conjugated polymers with noncovalently-fused-ring structure for the next-generation OTEs.
共轭聚合物正成为有机热电材料(OTE)的有力候选材料。然而,要使该器件真正普及,p型和n型共轭聚合物都是必不可少的。尽管付出了巨大努力,但迄今为止,尚未存在与p型基准PEDOT:PSS相当的n型材料,主要原因是其电导率(σ)较低。在此,报道了一种近无定形的n型共轭聚合物,即pDFSe,通过实现电荷传输与掺杂效率之间的协同作用,具有高电导率。聚合物pDFSe是基于二酮吡咯并吡咯-二氟苯并硒二唑-二酮吡咯并吡咯(DFSe)的受体三联体部分合成的,其具有非共价稠环结构以增强主链刚性。此外,引入了轴对称的噻吩-硒吩-噻吩供体,这使得能够形成近无定形微结构。上述优点确保了良好的掺杂效率,同时不牺牲有效的链内电荷载流子传输。因此,基于pDFSe的n型晶体管表现出高达6.15 cm² V⁻¹ s⁻¹ 的高电子迁移率,远高于其没有非共价稠环结构的参考聚合物pDSe(0.77 cm² V⁻¹ s⁻¹)。进一步进行n掺杂后,pDFSe表现出62.6 S cm⁻¹ 的优异电导率和133.1 μW m⁻¹ K⁻² 的最大功率因子,这是溶液法制备的n型聚合物报道的最高值之一。结果表明,具有非共价稠环结构的近无定形n型共轭聚合物在下一代OTE方面具有巨大潜力。