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具有集成B←N和氰基双功能化的三环骨架用于高性能n型有机电子器件。

A Tricyclic Framework with Integrated B←N and Cyano Dual Functionalization for Superior n-Type Organic Electronics.

作者信息

Jiang Zhen, Liu Di, Wang Yang, Song Wei, Yan Dongsheng, Ge Ziyi, Liu Yunqi

机构信息

Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, 2005, Songhu Road, Shanghai, 200438, China.

Laboratory of Advanced Materials, Fudan University, 2005, Songhu Road, Shanghai, 200438, China.

出版信息

Angew Chem Int Ed Engl. 2025 Jan 21;64(4):e202416669. doi: 10.1002/anie.202416669. Epub 2024 Nov 11.

Abstract

n-Type conjugated polymers featuring low-lying lowest unoccupied molecular orbital (LUMO) energy levels are essential for achieving high-performance n-type organic thin-film transistors (OTFTs) and organic thermoelectrics (OTEs). However, the synthesis of acceptors with strong electron-withdrawing characteristics presents a significant challenge. Herein, a peripheral functionalization strategy is employed on the tricyclic framework anthracene by introducing dual N,O-bidentate BF/B(CN) groups to enhance its electron-withdrawing capability. This approach successfully navigates synthetic challenges, leading to the development of two novel acceptor building blocks: DBNF and DBNCN. Compared to the counterparts with a single N,O-bidentate BF/B(CN) moiety, DBNF and DBNCN exhibit an extended π-backbone, enhanced molecular packing, and improved electron-withdrawing properties. Utilizing these innovative acceptor monomers, copolymers, PDBNF and PDBNCN, are synthesized, which exhibit considerably suppressed LUMO ≈-4.0 eV. The deep LUMO of PDBNF together with its favourable bimodal packing orientation leads to remarkable electron mobility of 3.04 cm V s with improved stability in OTFTs. Importantly, efficient n-doping in OTEs is achieved with PDBNCN, exhibiting exceptional conductivity of 95.5 S cm and a maximum power factor of 147.8 μW m K-among the highest reported for solution-processed n-type polymers. This work underscores the effectiveness of introducing dual B←N and cyano functionalities in attaining high-performance n-type plastic electronics.

摘要

具有低最低未占据分子轨道(LUMO)能级的n型共轭聚合物对于实现高性能n型有机薄膜晶体管(OTFT)和有机热电材料(OTE)至关重要。然而,合成具有强吸电子特性的受体面临重大挑战。在此,通过引入双N,O-双齿BF/B(CN)基团,在三环骨架蒽上采用外围功能化策略,以增强其吸电子能力。这种方法成功克服了合成挑战,开发出两种新型受体结构单元:DBNF和DBNCN。与具有单个N,O-双齿BF/B(CN)部分的对应物相比,DBNF和DBNCN表现出扩展的π骨架、增强的分子堆积和改善的吸电子性能。利用这些创新的受体单体,合成了共聚物PDBNF和PDBNCN,它们的LUMO被显著抑制至约 -4.0 eV。PDBNF的深LUMO及其有利的双峰堆积取向导致在OTFT中具有3.04 cm² V⁻¹ s⁻¹的显著电子迁移率以及改善的稳定性。重要的是,PDBNCN在OTE中实现了高效的n型掺杂,表现出95.5 S cm⁻¹的优异电导率和147.8 μW m⁻¹ K⁻²的最大功率因子,这是溶液处理的n型聚合物中报道的最高值之一。这项工作强调了引入双B←N和氰基官能团在实现高性能n型塑料电子学方面的有效性。

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