Deng Sihui, Dong Changshuai, Liu Jian, Meng Bin, Hu Junli, Min Yang, Tian Hongkun, Liu Jun, Wang Lixiang
State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, P. R. China.
University of Science and Technology of China, Hefei, 230026, P. R. China.
Angew Chem Int Ed Engl. 2023 Apr 24;62(18):e202216049. doi: 10.1002/anie.202216049. Epub 2023 Mar 22.
Typical n-type conjugated polymers are based on fused-ring electron-accepting building blocks. Herein, we report a non-fused-ring strategy to design n-type conjugated polymers, i.e. introducing electron-withdrawing imide or cyano groups to each thiophene unit of a non-fused-ring polythiophene backbone. The resulting polymer, n-PT1, shows low LUMO/HOMO energy levels of -3.91 eV/-6.22 eV, high electron mobility of 0.39 cm V s and high crystallinity in thin film. After n-doping, n-PT1 exhibits excellent thermoelectric performance with an electrical conductivity of 61.2 S cm and a power factor (PF) of 141.7 μW m K . This PF is the highest value reported so far for n-type conjugated polymers and this is the first time for polythiophene derivatives to be used in n-type organic thermoelectrics. The excellent thermoelectric performance of n-PT1 is due to its superior tolerance to doping. This work indicates that polythiophene derivatives without fused rings are low-cost and high-performance n-type conjugated polymers.
典型的n型共轭聚合物基于稠环电子受体结构单元。在此,我们报道一种设计n型共轭聚合物的非稠环策略,即向非稠环聚噻吩主链的每个噻吩单元引入吸电子的酰亚胺或氰基。所得聚合物n-PT1显示出低的LUMO/HOMO能级,分别为-3.91 eV/-6.22 eV,高的电子迁移率为0.39 cm² V⁻¹ s⁻¹,并且在薄膜中具有高结晶度。n掺杂后,n-PT1表现出优异的热电性能,电导率为61.2 S cm⁻¹,功率因子(PF)为141.7 μW m⁻¹ K⁻²。该PF是迄今为止报道的n型共轭聚合物的最高值,并且这是聚噻吩衍生物首次用于n型有机热电材料。n-PT1优异的热电性能归因于其对掺杂的卓越耐受性。这项工作表明,无稠环的聚噻吩衍生物是低成本且高性能的n型共轭聚合物。