Peria William K, Katz Michael B, Wang Jian-Ping, Crowell Paul A, Gopman Daniel B
School of Physics and Astronomy, University of Minnesota, Minneapolis, MN, 55455, USA.
Materials Science and Engineering Division, NIST, Gaithersburg, MD, 20899, USA.
Sci Rep. 2024 Jun 10;14(1):13290. doi: 10.1038/s41598-024-63475-0.
Thin ferromagnetic films possessing perpendicular magnetic anisotropy derived from the crystal lattice can deliver the requisite magnetocrystalline anisotropy density for thermally stable magnetic memory and logic devices at the single-digit-nm lateral size. Here, we demonstrate that an epitaxial synthetic antiferromagnet can be formed from L1 FePd, a candidate material with large magnetocrystalline anisotropy energy, through insertion of an ultrathin Ir spacer. Tuning of the Ir spacer thickness leads to synthetic antiferromagnetically coupled FePd layers, with an interlayer exchange field upwards of 0.6 T combined with a perpendicular magnetic anisotropy energy of 0.95 MJ/m and a low Gilbert damping of 0.01. Temperature-dependent ferromagnetic resonance measurements show that the Gilbert damping is mostly insensitive to temperature over a range of 20 K up to 300 K. In FePd|Ir|FePd trilayers with lower interlayer exchange coupling, optic and acoustic dynamic ferromagnetic resonance modes are explored as a function of temperature. The ability to engineer low damping and large interlayer exchange coupling in FePd|Ir|FePd synthetic antiferromagnets with high perpendicular magnetic anisotropy could prove useful for high performance spintronic devices.
具有源自晶格的垂直磁各向异性的薄铁磁薄膜,能够为横向尺寸为个位数纳米的热稳定磁存储器和逻辑器件提供所需的磁晶各向异性密度。在此,我们证明了通过插入超薄铱间隔层,可以由具有大磁晶各向异性能量的候选材料L1 FePd形成外延合成反铁磁体。调整铱间隔层的厚度会导致合成反铁磁耦合的FePd层,其层间交换场超过0.6 T,垂直磁各向异性能量为0.95 MJ/m,吉尔伯特阻尼低至0.01。与温度相关的铁磁共振测量表明,在20 K至300 K的温度范围内,吉尔伯特阻尼对温度大多不敏感。在层间交换耦合较低的FePd|Ir|FePd三层结构中,研究了光学和声学动态铁磁共振模式随温度的变化。在具有高垂直磁各向异性的FePd|Ir|FePd合成反铁磁体中设计低阻尼和大层间交换耦合的能力,可能对高性能自旋电子器件有用。