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通过缺陷浓度梯度设计实现无铅压电陶瓷的超高电弯曲变形

Ultrahigh Electrobending Deformation in Lead-Free Piezoelectric Ceramics via Defect Concentration Gradient Design.

作者信息

Wang Jie, Wang Binquan, Zhang Hongjie, Zhang Shujun, Guo Yiping

机构信息

State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China.

Institute for Superconducting and Electronic Materials, Faculty of Engineering and Information Sciences, University of Wollongong, Wollongong, NSW, 2500, Australia.

出版信息

Adv Mater. 2024 Aug;36(33):e2404682. doi: 10.1002/adma.202404682. Epub 2024 Jun 22.

Abstract

Recent breakthroughs in defect-engineered lead-free piezoelectric ceramics have reported remarkable electrostrain values, surpassing the limit of lattice distortion. This has aroused wide concern on bending deformation and the associated underlying mechanism. Herein, via designing lead-free piezoelectric ceramics with varying volatilization characteristics, it is uncovered that the ultrahigh electrobending deformation is primarily attributed to a large strain gradient induced by unevenly distributed defect dipoles. In 0.5 mm thick Sr/Sn co-doped potassium sodium niobate ceramics featuring volatile K/Na elements, the inherent bipolar electrostrain value can reach 0.3% at 20 kV cm due to the existence of defect dipoles, while the gradient distribution of defect dipole generates significant bending displacement, amplifying apparent electrostrain value to 1.1%. Notably, nonvolatile BaTiO ceramic with homogeneous defect dipole distribution does not present electrobending. Of particular interest is that the electrobending phenomenon can be observed through introducing a defect dipole gradient into barium titanate ceramic. A monolayer ceramic with defect dipole gradient can generate large tip displacement (±1.5 mm) in cantilever structure, demonstrating its promising potential in precise positioning. This study delves into the underlying mechanism driving electrobending deformation and its impact on the apparent electrostrain measurement in defect-engineered piezoelectric ceramics, providing fresh perspectives for the development of piezoelectric bending actuators.

摘要

缺陷工程无铅压电陶瓷最近的突破报道了显著的电应变值,超过了晶格畸变的极限。这引起了人们对弯曲变形及其相关潜在机制的广泛关注。在此,通过设计具有不同挥发特性的无铅压电陶瓷,发现超高电弯曲变形主要归因于由分布不均匀的缺陷偶极子引起的大应变梯度。在具有挥发性K/Na元素的0.5毫米厚的Sr/Sn共掺杂铌酸钾钠陶瓷中,由于缺陷偶极子的存在,固有双极电应变值在20 kV/cm时可达到0.3%,而缺陷偶极子的梯度分布产生显著的弯曲位移,将表观电应变值放大到1.1%。值得注意的是,具有均匀缺陷偶极子分布的非挥发性BaTiO陶瓷不存在电弯曲现象。特别有趣的是,通过在钛酸钡陶瓷中引入缺陷偶极子梯度可以观察到电弯曲现象。具有缺陷偶极子梯度 的单层陶瓷在悬臂结构中可以产生大的尖端位移(±1.5毫米),表明其在精确定位方面具有广阔的应用潜力。本研究深入探讨了驱动电弯曲变形的潜在机制及其对缺陷工程压电陶瓷中表观电应变测量的影响,为压电弯曲致动器的发展提供了新的视角。

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