Yan Yangxi, Li Zhimin, Jin Li, Du Hongliang, Zhang Maolin, Zhang Dongyan, Hao Yue
School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China.
Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China.
ACS Appl Mater Interfaces. 2021 Aug 18;13(32):38517-38525. doi: 10.1021/acsami.1c10298. Epub 2021 Aug 5.
An ultrahigh piezoelectric coefficient is always desired for electromechanical devices and systems. However, for a long time, a large value in lead-based and lead-free piezoelectric ceramics was usually obtained at the expense of their , and vice versa, limiting their practical applications. Here, we proposed a design concept, i.e., integrating phase boundary and defect engineering, to resolve the above challenges, based on a concrete example of Fe-modified 0.51Pb(HfTi)O-0.49Pb(NbNi)O (0.51PHT-0.49PNN) ceramics. An abnormally high value of 1124 pC/N and a of 133 °C were achieved simultaneously in this study, which are obviously superior to those of other reported representative lead-based and lead-free piezoelectric ceramics, which made a giant step forward in both piezoelectric material research and electromechanical applications. A large strain response of 0.28% and low hysteresis were also obtained under an applied field of 20 kV/cm in the 0.51PHT-0.49PNN ceramic. The phase-field simulations and piezoresponse force microscopy demonstrated that the high piezoelectric performance should be attributed to the formation of mesoscopic domains resulting from morphotropic phase boundary and defect dipoles. Most importantly, this work provides an avenue for the development of piezoelectric ceramics with ultrahigh and high and has the potential to lead to the development of a range of high-performance Pb-based ceramics for electromechanical applications in the future.
机电设备和系统一直都需要超高的压电系数。然而，长期以来，铅基和无铅压电陶瓷通常要以牺牲其[此处原文缺失部分内容]为代价才能获得较大的值，反之亦然，这限制了它们的实际应用。在此，我们基于铁改性的0.51Pb(HfTi)O-0.49Pb(NbNi)O（0.51PHT-0.49PNN）陶瓷这一具体实例，提出了一种设计理念，即整合相界和缺陷工程，以解决上述挑战。在本研究中，同时实现了异常高的1,124 pC/N的值和133°C的[此处原文缺失部分内容]，这明显优于其他已报道的代表性铅基和无铅压电陶瓷，在压电材料研究和机电应用方面都向前迈出了一大步。在20 kV/cm的外加电场下，0.51PHT-0.49PNN陶瓷还获得了0.28%的大应变响应和低滞后。相场模拟和压电响应力显微镜表明，高压电性能应归因于由准同型相界和缺陷偶极形成的介观畴。最重要的是，这项工作为开发具有超高[此处原文缺失部分内容]和高[此处原文缺失部分内容]的压电陶瓷提供了一条途径，并有可能在未来推动一系列用于机电应用的高性能铅基陶瓷的发展。
