Castro Mario, Saéz Guidobeth, Vergara Apaz Patricio, Allende Sebastián, Nunez Alvaro S
Departamento de Física, FCFM, Universidad de Chile, Santiago, 8370448, Chile.
Centro de Nanociencia y Nanotecnología CEDENNA, Santiago, 9170124, Chile.
Nano Lett. 2024 Jul 3;24(26):7911-7918. doi: 10.1021/acs.nanolett.4c01146. Epub 2024 Jun 18.
Manipulating spin transport enhances the functionality of electronic devices, allowing them to surpass physical constraints related to speed and power. For this reason, the use of van der Waals multiferroics at the interface of heterostructures offers promising prospects for developing high-performance devices, enabling the electrical control of spin information. Our work focuses primarily on a mechanism for multiferroicity in two-dimensional van der Waals materials that stems from an interplay between antiferromagnetism and the breaking of inversion symmetry in certain bilayers. We provide evidence for spin-electrical couplings that include manipulating van der Waals multiferroic edges via external voltages and the subsequent control of spin transport including for fully multiferroic spin field-effect transistors.
操纵自旋输运可增强电子设备的功能，使其能够突破与速度和功率相关的物理限制。因此，在异质结构界面处使用范德华多铁性材料为开发高性能设备提供了广阔前景，能够实现对自旋信息的电控制。我们的工作主要聚焦于二维范德华材料中的多铁性机制，该机制源于反铁磁性与某些双层结构中反演对称性破缺之间的相互作用。我们提供了自旋 - 电耦合的证据，包括通过外部电压操纵范德华多铁性边缘以及随后对自旋输运的控制，这其中也包括对完全多铁性自旋场效应晶体管的控制。
