Huang Lei, Dong Jiabin, Hu Yue, Yang Junjie, Peng Xiaoqi, Wang Haolin, Liu Aoxing, Dong Yizhe, Wang Hong, Zhu Changfei, Tang Rongfeng, Zhang Yi, Chen Tao
Hefei National Research Center for Physical Sciences at the Microscale, CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, School of Chemistry and Materials Science, University of Science and Technology of China, Hefei, 230026, China.
Institute of Photoelectronic Thin Film Devices and Technology of, Nankai University, Tianjin, 300350, China.
Angew Chem Int Ed Engl. 2024 Sep 2;63(36):e202406512. doi: 10.1002/anie.202406512. Epub 2024 Aug 2.
Band structure of a semiconducting film critically determines the charge separation and transport efficiency. In antimony selenosulfide (Sb(S,Se)) solar cells, the hydrothermal method has achieved control of band gap width of Sb(S,Se) thin film through tuning the atomic ratio of S/Se, resulting in an efficiency breakthrough towards 10 %. However, the obtained band structure exhibits an unfavorable gradient distribution in terms of carrier transport, which seriously impedes the device efficiency improvement. To solve this problem, here we develop a strategy by intentionally regulating hydrothermal temperature to control the chemical reaction kinetics between S and Se sources with Sb source. This approach enables the control over vertical distribution of S/Se atomic ratio in Sb(S,Se) films, forming a favorable band structure which is conducive to carrier transport. Meanwhile, the adjusted element distribution not only ensures the uniformity of grain structure, but also increases the Se content of the films and suppress sulfur vacancy defects. Ultimately, the device delivers a high efficiency of 10.55 %, which is among the highest reported efficiency of Sb(S,Se) solar cells. This study provides an effective strategy towards manipulating the element distribution in mixed-anion compound films prepared by solution-based method to optimize their optical and electrical properties.
半导体薄膜的能带结构对电荷分离和传输效率起着关键作用。在硒硫化锑(Sb(S,Se))太阳能电池中,水热法通过调节S/Se的原子比实现了对Sb(S,Se)薄膜带隙宽度的控制,使效率突破达到了10%。然而,就载流子传输而言,所获得的能带结构呈现出不利的梯度分布,这严重阻碍了器件效率的提高。为了解决这个问题,我们在此开发了一种策略,即通过有意调节水热温度来控制S和Se源与Sb源之间的化学反应动力学。这种方法能够控制Sb(S,Se)薄膜中S/Se原子比的垂直分布,形成有利于载流子传输的能带结构。同时,调整后的元素分布不仅确保了晶粒结构的均匀性,还增加了薄膜中的Se含量并抑制了硫空位缺陷。最终,该器件实现了10.55%的高效率,这是报道的Sb(S,Se)太阳能电池的最高效率之一。本研究为通过溶液法制备的混合阴离子化合物薄膜操纵元素分布以优化其光学和电学性质提供了一种有效策略。