Maurtua Collin, Zide Joshua, Chakraborty Chitraleema
Department of Materials Science and Engineering, University of Delaware, Newark, DE 19716, United States of America.
J Phys Condens Matter. 2024 Jun 27;36(38). doi: 10.1088/1361-648X/ad5a5d.
Transition metal dichalcogenide (TMD/TMDC) monolayers have gained considerable attention in recent years for their unique properties. Some of these properties include direct bandgap emission and strong mechanical and electronic properties. For these reasons, monolayer TMDs have been considered a promising material for next-generation quantum technologies and optoelectronic devices. However, for the field to make more gainful advancements and be implemented in devices, high-quality TMD monolayers need to be produced at a larger scale with high quality. In this article, some of the current means to produce larger-scale semiconducting monolayer TMDs will be reviewed. An emphasis will be given to the technique of molecular beam epitaxy (MBE) for two main reasons: (1) there is a growing body of research using this technique to grow TMD monolayers and (2) there is yet to be a body of work that has summarized the current research for MBE monolayer growth of TMDs.
近年来，过渡金属二硫属化物（TMD/TMDC）单层因其独特的性质而备受关注。这些性质包括直接带隙发射以及强大的机械和电子性能。由于这些原因，单层TMD被认为是下一代量子技术和光电器件的有前途的材料。然而，为了该领域取得更有成效的进展并应用于器件中，需要大规模高质量地生产高质量的TMD单层。在本文中，将回顾一些当前生产大规模半导体单层TMD的方法。将重点介绍分子束外延（MBE）技术，主要有两个原因：（1）越来越多的研究使用该技术来生长TMD单层；（2）尚未有工作对TMD的MBE单层生长的当前研究进行总结。
