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原位核壳钙钛矿-MoS光晶体管的增强光探测性能

Enhanced Photodetection Performance of an In Situ Core/Shell Perovskite-MoS Phototransistor.

作者信息

Sim Jinwoo, Ryoo Sunggyu, Kim Joo Sung, Jang Juntae, Ahn Heebeom, Kim Donguk, Jung Joonha, Kong Taehyun, Choi Hyeonmin, Lee Yun Seog, Lee Tae-Woo, Cho Kyungjune, Kang Keehoon, Lee Takhee

机构信息

Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea.

Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea.

出版信息

ACS Nano. 2024 Jul 2;18(26):16905-16913. doi: 10.1021/acsnano.4c02775. Epub 2024 Jun 21.

DOI:10.1021/acsnano.4c02775
PMID:38904449
Abstract

While two-dimensional transition metal dichalcogenides (TMDCs)-based photodetectors offer prospects for high integration density and flexibility, their thinness poses a challenge regarding low light absorption, impacting photodetection sensitivity. Although the integration of TMDCs with metal halide perovskite nanocrystals (PNCs) has been known to be promising for photodetection with a high absorption coefficient of PNCs, the low charge mobility of PNCs delays efficient photocarrier injection into TMDCs. In this study, we integrated MoS with in situ formed core/shell PNCs with short ligands that minimize surface defects and enhance photocarrier injection. The PNCs/MoS heterostructure efficiently separates electrons and holes by establishing type II band alignment and consequently inducing a photogating effect. The synergistic interplay between photoconductive and photogating effects yields a high responsivity of 2.2 × 10 A/W and a specific detectivity of 9.0 × 10 Jones. Our findings offer a promising pathway for developing low-cost, high-performance phototransistors leveraging the advantages of two-dimensional (2D) materials.

摘要

虽然基于二维过渡金属二卤化物(TMDCs)的光电探测器具有实现高集成密度和灵活性的前景,但其薄层特性在低光吸收方面带来了挑战,影响了光电探测灵敏度。尽管已知将TMDCs与金属卤化物钙钛矿纳米晶体(PNCs)集成对于利用PNCs的高吸收系数进行光电探测很有前景,但PNCs的低电荷迁移率延缓了光生载流子向TMDCs的有效注入。在本研究中,我们将MoS与原位形成的具有短配体的核/壳PNCs集成,这些短配体可使表面缺陷最小化并增强光生载流子注入。PNCs/MoS异质结构通过建立II型能带排列并因此诱导光门控效应,有效地分离了电子和空穴。光电导效应和光门控效应之间的协同相互作用产生了2.2×10 A/W的高响应度和9.0×10琼斯的比探测率。我们的研究结果为利用二维(2D)材料的优势开发低成本、高性能的光电晶体管提供了一条有前景的途径。

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