Zhao Xingchao, Liu Ming, Wang Jian, Yang Kaixuan, Zhang Haolan, Jeong Sang Young, Ma Xiaoling, Woo Han Young, Zhang Fujun
School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, People's Republic of China.
College of Physics and Electronic Engineering, Taishan University, Taian 271000, Shandong Province, People's Republic of China.
ACS Appl Mater Interfaces. 2024 Jul 10;16(27):35400-35409. doi: 10.1021/acsami.4c05558. Epub 2024 Jun 25.
A series of dual-band photomultiplication (PM)-type organic photodetectors (OPDs) were fabricated by employing a donor(s)/acceptor (100:1, wt/wt) mixed layer and an ultrathin Y6 layer as the active layers, as well as by using PNDIT-F3N as an interfacial layer near the indium tin oxide (ITO) electrode. The dual-band PM-type OPDs exhibit the response range of 330-650 nm under forward bias and the response range of 650-850 nm under reverse bias. The tunable spectral response range of dual-band PM-type OPDs under forward or reverse bias can be explained well from the trapped electron distribution near the electrodes. The dark current density () of the dual-band PM-type OPDs can be efficiently suppressed by employing PNDIT-F3N as the anode interfacial layer and the special active layers with hole-only transport characteristics. The light current density () of the dual-band PM-type OPDs can be slightly increased by incorporating wide-bandgap polymer P-TPDs with relatively large hole mobility (μ) in the active layers. The signal-to-noise ratios of the optimized dual-band PM-type OPDs reach 100,980 under -50 V bias and white light illumination with an intensity of 1.0 mW·cm, benefiting from the ultralow by employing wide-bandgap PNDIT-F3N as the anode interfacial buffer layer and the increased by incorporating appropriate P-TPD in the active layers.
通过采用供体/受体（重量比100:1）混合层和超薄Y6层作为有源层，并使用PNDIT-F3N作为氧化铟锡（ITO）电极附近的界面层，制备了一系列双波段光电倍增（PM）型有机光电探测器（OPD）。双波段PM型OPD在正向偏压下的响应范围为330 - 650 nm，在反向偏压下的响应范围为650 - 850 nm。双波段PM型OPD在正向或反向偏压下可调的光谱响应范围可以从电极附近的俘获电子分布得到很好的解释。通过采用PNDIT-F3N作为阳极界面层和具有仅空穴传输特性的特殊有源层，可以有效抑制双波段PM型OPD的暗电流密度（）。通过在有源层中掺入具有相对较大空穴迁移率（μ）的宽带隙聚合物P-TPD，可以使双波段PM型OPD的光电流密度（）略有增加。得益于采用宽带隙PNDIT-F3N作为阳极界面缓冲层实现的超低以及在有源层中掺入适当的P-TPD实现的光电流增加，优化后的双波段PM型OPD在-50 V偏压和强度为1.0 mW·cm的白光照射下的信噪比达到100,980。
