Shen Yufan, Ooe Kousuke, Yuan Xueyou, Yamada Tomoaki, Kobayashi Shunsuke, Haruta Mitsutaka, Kan Daisuke, Shimakawa Yuichi
Institute for Chemical Research, Kyoto University, Uji, Kyoto, Japan.
Nanostructures Research Laboratory, Japan Fine Ceramics Center, Nagoya, Japan.
Nat Commun. 2024 Jun 25;15(1):4789. doi: 10.1038/s41467-024-49055-w.
Two-dimensional freestanding membranes of materials, which can be transferred onto and make interfaces with any material, have attracted attention in the search for functional properties that can be utilized for next-generation nanoscale devices. We fabricated stable 1-nm-thick hafnia membranes exhibiting the metastable rhombohedral structure and out-of-plane ferroelectric polarizations as large as 13 μC/cm. We also found that the rhombohedral phase transforms into another metastable orthorhombic phase without the ferroelectricity deteriorating as the thickness increases. Our results reveal the key role of the rhombohedral phase in the scale-free ferroelectricity in hafnia and also provide critical insights into the formation mechanism and phase stability of the metastable hafnia. Moreover, ultrathin hafnia membranes enable heterointerfaces and devices to be fabricated from structurally dissimilar materials beyond structural constrictions in conventional film-growth techniques.
材料的二维独立膜能够转移到任何材料上并与之形成界面,在寻找可用于下一代纳米级器件的功能特性方面受到了关注。我们制备了稳定的1纳米厚氧化铪膜,其呈现出亚稳菱方结构,且面外铁电极化高达13 μC/cm²。我们还发现,随着厚度增加,菱方相转变为另一种亚稳正交相,而铁电性并未恶化。我们的结果揭示了菱方相在氧化铪无标度铁电性中的关键作用,也为亚稳氧化铪的形成机制和相稳定性提供了重要见解。此外,超薄氧化铪膜能够突破传统薄膜生长技术中的结构限制,由结构不同的材料制造异质界面和器件。