• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利：CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法，用中文像聊天一样搜索，搜遍4000万医学文献。AI智能推荐，让科研检索更轻松。

立即免费搜索

文件翻译

保留排版，准确专业，支持PDF/Word/PPT等文件格式，支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述，25分钟生成高质量综述，智能提取关键信息，辅助科研写作。

立即免费体验

在外延掺杂的HfO铁电薄膜中区分菱方相和正交相。

Distinguishing the Rhombohedral Phase from Orthorhombic Phases in Epitaxial Doped HfO Ferroelectric Films.

作者信息

Petraru Adrian, Gronenberg Ole, Schürmann Ulrich, Kienle Lorenz, Droopad Ravi, Kohlstedt Hermann

机构信息

Nanoelectronics, Institute of Electrical Engineering and Information Engineering, Kiel University, Kiel 24143, Germany.

Institute for Materials Science - Synthesis and Real Structure, Faculty of Engineering, Kiel University, Kaiserstraße 2, Kiel D-24143, Germany.

出版信息

ACS Appl Mater Interfaces. 2024 Aug 14;16(32):42534-42545. doi: 10.1021/acsami.4c10423. Epub 2024 Aug 5.

DOI:10.1021/acsami.4c10423
PMID:39102275
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11331437/
Abstract

Epitaxial strain plays an important role in the stabilization of ferroelectricity in doped hafnia thin films, which are emerging candidates for Si-compatible nanoscale devices. Here, we report on epitaxial ferroelectric thin films of doped HfO deposited on LaSrMnO-buffered SrTiO substrates, LaSrMnO SrTiO-buffered Si (100) wafers, and trigonal AlO substrates. The investigated films appear to consist of four domains in a rhombohedral phase for films deposited on LaSrMnO-buffered SrTiO substrates and two domains for those deposited on sapphire. These findings are supported by extensive transmission electron microscopy characterization of the investigated films. The doped hafnia films show ferroelectric behavior with a remanent polarization up to 25 μC/cm and they do not require wake-up cycling to reach the polarization, unlike the reported polycrystalline orthorhombic ferroelectric hafnia films.

摘要

外延应变在掺杂氧化铪薄膜铁电性的稳定中起着重要作用，掺杂氧化铪薄膜是用于与硅兼容的纳米级器件的新兴候选材料。在此，我们报道了沉积在镧锶锰氧化物缓冲的钛酸锶衬底、镧锶锰氧化物/钛酸锶缓冲的硅（100）晶片以及三角氧化铝衬底上的掺杂氧化铪外延铁电薄膜。对于沉积在镧锶锰氧化物缓冲的钛酸锶衬底上的薄膜，所研究的薄膜似乎由菱形相中的四个畴组成，而对于沉积在蓝宝石上的薄膜则由两个畴组成。这些发现得到了对所研究薄膜进行的大量透射电子显微镜表征的支持。掺杂氧化铪薄膜表现出铁电行为，剩余极化高达25 μC/cm²，并且与报道的多晶正交铁电氧化铪薄膜不同，它们不需要唤醒循环就能达到极化。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0ab4/11331437/d0ab9953f5a5/am4c10423_0011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0ab4/11331437/6a556142772d/am4c10423_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0ab4/11331437/060108d2c1fa/am4c10423_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0ab4/11331437/8c0c7c40004e/am4c10423_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0ab4/11331437/4d5feb3a4a01/am4c10423_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0ab4/11331437/5391147efff5/am4c10423_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0ab4/11331437/b7dc89903462/am4c10423_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0ab4/11331437/9ad4b7056f27/am4c10423_0007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0ab4/11331437/2e8f339b25f5/am4c10423_0008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0ab4/11331437/aaf788864776/am4c10423_0009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0ab4/11331437/1a6cc86532cc/am4c10423_0010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0ab4/11331437/d0ab9953f5a5/am4c10423_0011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0ab4/11331437/6a556142772d/am4c10423_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0ab4/11331437/060108d2c1fa/am4c10423_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0ab4/11331437/8c0c7c40004e/am4c10423_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0ab4/11331437/4d5feb3a4a01/am4c10423_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0ab4/11331437/5391147efff5/am4c10423_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0ab4/11331437/b7dc89903462/am4c10423_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0ab4/11331437/9ad4b7056f27/am4c10423_0007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0ab4/11331437/2e8f339b25f5/am4c10423_0008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0ab4/11331437/aaf788864776/am4c10423_0009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0ab4/11331437/1a6cc86532cc/am4c10423_0010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0ab4/11331437/d0ab9953f5a5/am4c10423_0011.jpg

相似文献

1
Distinguishing the Rhombohedral Phase from Orthorhombic Phases in Epitaxial Doped HfO Ferroelectric Films.在外延掺杂的HfO铁电薄膜中区分菱方相和正交相。
ACS Appl Mater Interfaces. 2024 Aug 14;16(32):42534-42545. doi: 10.1021/acsami.4c10423. Epub 2024 Aug 5.
2
A rhombohedral ferroelectric phase in epitaxially strained HfZrO thin films.外延应变HfZrO薄膜中的菱面体铁电相。
Nat Mater. 2018 Dec;17(12):1095-1100. doi: 10.1038/s41563-018-0196-0. Epub 2018 Oct 22.
3
Interface-engineered ferroelectricity of epitaxial HfZrO thin films.外延 HfZrO 薄膜的界面工程铁电性。
Nat Commun. 2023 Mar 30;14(1):1780. doi: 10.1038/s41467-023-37560-3.
4
Symmetry Engineering of Epitaxial HfZrO Ultrathin Films.外延HfZrO超薄膜的对称性工程
ACS Appl Mater Interfaces. 2024 May 29;16(21):27532-27540. doi: 10.1021/acsami.4c03146. Epub 2024 May 14.
5
Epitaxial Integration on Si(001) of Ferroelectric HfZrO Capacitors with High Retention and Endurance.硅（001）上具有高保持力和耐久性的铁电 HfZrO 电容器的外延集成。
ACS Appl Mater Interfaces. 2019 Feb 13;11(6):6224-6229. doi: 10.1021/acsami.8b18762. Epub 2019 Feb 1.
6
Rhombohedral R3 Phase of Mn-Doped HfZrO Epitaxial Films with Robust Ferroelectricity.具有强铁电性的锰掺杂铪锆氧化物外延薄膜的菱面体R3相
Adv Mater. 2024 Nov;36(47):e2406038. doi: 10.1002/adma.202406038. Epub 2024 Oct 9.
7
Improved polarization and endurance in ferroelectric HfZrO films on SrTiO(110).在SrTiO(110)上的铁电HfZrO薄膜中提高了极化和耐久性。
Nanoscale. 2022 Feb 10;14(6):2337-2343. doi: 10.1039/d1nr06983g.
8
Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si.硅上的超薄 Hf0.5Zr0.5O2 铁电薄膜。
ACS Appl Mater Interfaces. 2016 Mar 23;8(11):7232-7. doi: 10.1021/acsami.5b11653. Epub 2016 Mar 14.
9
Wake-Up Free Ultrathin Ferroelectric HfZrO Films.免唤醒超薄铁电铪锆氧化物薄膜
Nanomaterials (Basel). 2023 Oct 25;13(21):2825. doi: 10.3390/nano13212825.
10
Improved Ferroelectric Properties in HfZrO Thin Films by Microwave Annealing.通过微波退火改善HfZrO薄膜的铁电性能。
Nanomaterials (Basel). 2022 Aug 30;12(17):3001. doi: 10.3390/nano12173001.

本文引用的文献

1
A stable rhombohedral phase in ferroelectric Hf(Zr)O capacitor with ultralow coercive field.具有超低矫顽场的铁电铪（锆）氧化物电容器中的稳定菱面体相。
Science. 2023 Aug 4;381(6657):558-563. doi: 10.1126/science.adf6137. Epub 2023 Aug 3.
2
Crystal and Electronic Structure of Oxygen Vacancy Stabilized Rhombohedral Hafnium Oxide.氧空位稳定的菱面体氧化铪的晶体结构与电子结构
ACS Appl Electron Mater. 2023 Jan 26;5(2):754-763. doi: 10.1021/acsaelm.2c01255. eCollection 2023 Feb 28.
3
Kinetically stabilized ferroelectricity in bulk single-crystalline HfO:Y.
块状单晶HfO:Y中动力学稳定的铁电性。
Nat Mater. 2021 Jun;20(6):826-832. doi: 10.1038/s41563-020-00897-x. Epub 2021 Jan 25.
4
Epitaxial Integration on Si(001) of Ferroelectric HfZrO Capacitors with High Retention and Endurance.硅（001）上具有高保持力和耐久性的铁电 HfZrO 电容器的外延集成。
ACS Appl Mater Interfaces. 2019 Feb 13;11(6):6224-6229. doi: 10.1021/acsami.8b18762. Epub 2019 Feb 1.
5
A rhombohedral ferroelectric phase in epitaxially strained HfZrO thin films.外延应变HfZrO薄膜中的菱面体铁电相。
Nat Mater. 2018 Dec;17(12):1095-1100. doi: 10.1038/s41563-018-0196-0. Epub 2018 Oct 22.
6
The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film.外延 Y 掺杂 HfO2 薄膜中显著铁电性的演示。
Sci Rep. 2016 Sep 9;6:32931. doi: 10.1038/srep32931.
7
Ferroelectricity and antiferroelectricity of doped thin HfO2-based films.掺杂 HfO2 基薄膜的铁电性和反铁电性。
Adv Mater. 2015 Mar 18;27(11):1811-31. doi: 10.1002/adma.201404531. Epub 2015 Feb 11.
8
Ferroelectricity in Simple Binary ZrO2 and HfO2.简单二元 ZrO2 和 HfO2 中的铁电性。
Nano Lett. 2012 Aug 8;12(8):4318-23. doi: 10.1021/nl302049k. Epub 2012 Jul 23.
9
Applications of modern ferroelectrics.现代铁电体的应用。
Science. 2007 Feb 16;315(5814):954-9. doi: 10.1126/science.1129564.
10
Two-dimensional and three-dimensional vortex lattice dynamics in DyBa2Cu3O7-(Y1-xPrx)Ba2Cu3O7 coupled heterostructures.
Phys Rev B Condens Matter. 1994 Jul 1;50(2):1229-1236. doi: 10.1103/physrevb.50.1229.