Kim Byeongchan, Lee Seojoo, Park Jin-Hong
Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Korea.
Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16417, Korea.
Nanoscale Horiz. 2024 Aug 19;9(9):1417-1431. doi: 10.1039/d4nh00030g.
2D semiconductors, represented by transition metal dichalcogenides (TMDs), have the potential to be alternative channel materials for advanced 3D field-effect transistors, such as gate-all-around field-effect-transistors (GAAFETs) and complementary field-effect-transistors (C-FETs), due to their inherent atomic thinness, moderate mobility, and short scaling lengths. However, 2D semiconductors encounter several technological challenges, especially the high contact resistance issue between 2D semiconductors and metals. This review provides a comprehensive overview of the high contact resistance issue in 2D semiconductors, including its physical background and the efforts to address it, with respect to their applicability to GAAFET structures.
以过渡金属二硫属化物（TMD）为代表的二维半导体，因其固有的原子级薄度、适度的迁移率和较短的缩放长度，有潜力成为先进三维场效应晶体管（如全栅场效应晶体管（GAAFET）和互补场效应晶体管（C-FET））的替代沟道材料。然而，二维半导体面临若干技术挑战，尤其是二维半导体与金属之间的高接触电阻问题。本综述全面概述了二维半导体中的高接触电阻问题，包括其物理背景以及针对GAAFET结构适用性方面为解决该问题所做的努力。
