Gawade Tejaswini C, Borole Umesh P, Behera Bhagaban, Ghosh S K, Bysakh S, Biswas A, Khan Jakeer, Chowdhury P
Nanomaterials Research Laboratory, Surface Engineering Division, CSIR-National Aerospace Laboratories, Bangalore 560 017, India.
Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201 002, India.
J Phys Condens Matter. 2024 Jul 19;36(42). doi: 10.1088/1361-648X/ad6072.
Magnetic sensor with spin valve-GMR technology with medium dynamic range is designed for a diversity of applications, including linear and rotary position measurements, proximity switches, and current sensors. For this, the sensing layer (SL) of the spin valve stack was modified by a soft pinning layer (SPL) through an exchange bias field created by an antiferromagnetic layer which has a lower blocking temperature than the one that is kept adjacent to the pinned layer. Numerical simulation was carried out to control the bias field by keeping a non-magnetic Ru spacer layer between the SPL and SL layers and the results were experimentally verified. The magnetic sensor was fabricated with linear operating field range of the order ±100 Oe having a sensitivity of the order of 0.1 m V VOenear zero field. The thermal performance confirms that the device can be operated in the temperature range of -40C to 125C and it has a thermal coefficient of voltage around 15V VC.
采用具有中等动态范围的自旋阀巨磁阻（GMR）技术的磁传感器，专为多种应用而设计，包括线性和旋转位置测量、接近开关以及电流传感器。为此，通过由反铁磁层产生的交换偏置场，利用软钉扎层（SPL）对自旋阀堆叠的传感层（SL）进行了改性，该反铁磁层的阻断温度低于与被钉扎层相邻的反铁磁层的阻断温度。通过在SPL层和SL层之间保留非磁性Ru间隔层来进行数值模拟以控制偏置场，结果得到了实验验证。所制造的磁传感器的线性工作场范围约为±100奥斯特，在零场附近的灵敏度约为0.1毫伏/奥斯特。热性能证实该器件可在-40℃至125℃的温度范围内工作，其电压热系数约为15微伏/℃。
