Zhao Xin, Tang G H
MOE Key Laboratory of Thermo-Fluid Science and Engineering, School of Energy and Power Engineering, Xi'an Jiaotong University, Xi'an 710049, China.
ACS Appl Mater Interfaces. 2024 Jul 24;16(29):37853-37864. doi: 10.1021/acsami.4c04222. Epub 2024 Jul 9.
The radiative cooling has great potential for electronic device cooling without requiring any energy consumption. However, a low thermal conductivity of most radiative cooling materials limits their application. Herein, a multishape codoping strategy was proposed to achieve collaborative enhancement of thermal conductivity and radiative properties. The hBN-coated hollow SiO particles were prepared based on electrostatic self-assembly technology, which were then mixed with hBN platelets and doped into a poly(vinylidene fluoride--hexafluoropropylene) substrate. Discrete dipole approximation theory was employed to reveal the mechanism and optimize the particle size. The results showed that the multishape codoping method can significantly improve the radiative performance, with 94.9% reflectivity and 91.2% emissivity. In addition, this zero-dimensional and two-dimensional composite doping structure facilitated the formation of a thermal conduction network, which enhanced the thermal conductivity of the film up to 1.32 W m K. The high thermal conductivity radiative cooling film can decrease the heater temperature from 58.8 to 31.3 °C, with a further reduction of temperature by 7.2 °C compared to the radiative cooling substrates with low thermal conductivity. The net cooling power of the film can reach 102.5 W m under direct sunlight. This work provides a novel strategy for high-efficiency electronic device cooling.
辐射冷却在无需任何能量消耗的情况下对电子设备冷却具有巨大潜力。然而，大多数辐射冷却材料的低导热率限制了它们的应用。在此，提出了一种多形状共掺杂策略以实现导热率和辐射性能的协同增强。基于静电自组装技术制备了hBN包覆的空心SiO颗粒，然后将其与hBN薄片混合并掺杂到聚（偏二氟乙烯 - 六氟丙烯）基体中。采用离散偶极近似理论揭示其机理并优化粒径。结果表明，多形状共掺杂方法可显著提高辐射性能，反射率达94.9%，发射率达91.2%。此外，这种零维与二维复合掺杂结构促进了热传导网络的形成，使薄膜的导热率提高到1.32 W m⁻¹ K⁻¹。高导热率辐射冷却薄膜可将加热器温度从58.8℃降至31.3℃，与低导热率的辐射冷却基体相比，温度进一步降低7.2℃。在直射阳光下，该薄膜的净冷却功率可达102.5 W m⁻²。这项工作为高效电子设备冷却提供了一种新策略。
