Wang Zhenbin, Bae Sanghyun, Baljozović Miloš, Adams Pardis, Yong David, Service Erin, Moehl Thomas, Niu Wenzhe, Tilley S David
Department of Chemistry, University of Zurich, Winterthurerstrasse 190, Zurich 8057, Switzerland.
Molecular Surface Science Group, Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf 8600, Switzerland.
ACS Catal. 2024 Jun 18;14(13):9877-9886. doi: 10.1021/acscatal.4c01762. eCollection 2024 Jul 5.
Antimony selenide (SbSe) has recently been intensively investigated and has achieved significant advancement in photoelectrochemical (PEC) water splitting. In this work, a facile one-step hydrothermal method for the preparation of Sn-doped SbSe photocathodes with improved PEC performance was investigated. We present an in-depth study of the performance enhancement in Sn-doped SbSe photocathodes using capacitance-voltage (CV), drive-level capacitance profiling (DLCP), and electrochemical impedance spectroscopy (EIS) techniques. The incorporation of Sn into the SbSe results in increased carrier density, reduced surface defects, and improved charge separation, thereby leading to improved PEC performance. With a thin SbSe absorber layer (270 nm thickness), the Sn-doped SbSe photocathode exhibits an improved photocurrent density of 17.1 mA cm at 0 V versus RHE ( ) compared to that of the undoped SbSe photocathode (14.4 mA cm). This work not only highlights the positive influence of Sn doping on SbSe photocathodes but also showcases a one-step method to synthesize doped SbSe with improved optoelectronic properties.
硒化锑（SbSe）近年来受到了广泛研究，并在光电化学（PEC）水分解方面取得了重大进展。在这项工作中，研究了一种简便的一步水热法来制备具有改进PEC性能的锡掺杂SbSe光阴极。我们使用电容-电压（CV）、驱动级电容剖析（DLCP）和电化学阻抗谱（EIS）技术对锡掺杂SbSe光阴极的性能增强进行了深入研究。将锡掺入SbSe中会导致载流子密度增加、表面缺陷减少以及电荷分离改善，从而提高PEC性能。对于厚度为270 nm的薄SbSe吸收层，与未掺杂的SbSe光阴极（14.4 mA/cm²）相比，锡掺杂的SbSe光阴极在相对于可逆氢电极（RHE）为0 V时表现出17.1 mA/cm²的改进光电流密度。这项工作不仅突出了锡掺杂对SbSe光阴极的积极影响，还展示了一种合成具有改进光电性能的掺杂SbSe的一步法。
