Roychowdhury Subhajit, Yanda Premakumar, Samanta Kartik, Yi Changjiang, Yao Mengyu, Orlandi Fabio, Manuel Pascal, Khalyavin Dmitry, Valle Enrico Giuseppe Della, Constantinou Procopios, Strocov Vladimir N, Vergniory Maia G, Shekhar Chandra, Felser Claudia
Max Planck Institute for Chemical Physics of Solids, 01187, Dresden, Germany.
Department of Chemistry, Indian Institute of Science Education and Research Bhopal, Bhopal, 462066, India.
Adv Mater. 2024 Aug;36(35):e2305916. doi: 10.1002/adma.202305916. Epub 2024 Jul 14.
A topological magnetic material showcases a multitude of intriguing properties resulting from the compelling interplay between topology and magnetism. These include notable phenomena such as a large anomalous Nernst effect (ANE), an anomalous Hall effect (AHE), and a topological Hall effect (THE). In most cases, topological transport phenomena are prevalent at temperatures considerably lower than room temperature, presenting a challenge for practical applications. However, the noncollinear ferromagnetic (FM) LaMnGe, characterized by a Mn square-net lattice and a notably high Curie temperature (T) of approximately 325 K, defies this trend as a topological semimetal. This work observes a giant topological Hall resistivity, , of ≈4.5 µΩ cm at room temperature when the angle between the applied field and the c-axis is 75°, which is significantly higher than state-of-the-art materials with noncoplanar spin structures. The single crystal neutron diffraction measurements agree with an incommensurate conical magnetic structure as the ground state. This observation suggests the enhanced spin chirality resulting from the noncoplanar spin configuration when the applied field is away from the magnetic easy axis as the origin of a large contribution to the observed THE. The findings unequivocally demonstrate that the FM LaMnGe holds great promise as a potential topological semimetal for spintronic applications even at room temperature.
一种拓扑磁性材料展现出众多有趣的特性,这些特性源于拓扑与磁性之间引人注目的相互作用。其中包括显著的现象,如大反常能斯特效应(ANE)、反常霍尔效应(AHE)和拓扑霍尔效应(THE)。在大多数情况下,拓扑输运现象在远低于室温的温度下普遍存在,这给实际应用带来了挑战。然而,具有Mn方形网晶格且居里温度(T)约为325 K的非共线铁磁(FM)LaMnGe作为拓扑半金属却违背了这一趋势。这项工作观察到,当外加磁场与c轴之间的夹角为75°时,在室温下的巨大拓扑霍尔电阻率约为4.5 μΩ cm,这显著高于具有非共面自旋结构的现有材料。单晶中子衍射测量结果与作为基态的非公度锥形磁结构相符。这一观察结果表明,当外加磁场远离磁易轴时,非共面自旋构型导致的自旋手征性增强是观察到的THE的一大贡献来源。这些发现明确表明,即使在室温下,FM LaMnGe作为自旋电子学应用的潜在拓扑半金属也具有巨大潜力。