Akabe Yugo, Shinohara Keito, Cadatal-Raduban Marilou, Yoshikawa Akira, Shimizu Toshihiko, Kato Kosaku, Agulto Verdad C, Nakajima Makoto, Sarukura Nobuhiko, Damdee Benchaphorn, Kaewkhao Jakrapong, Komeda Osamu, Suto Hiroyuki, Yamanoi Kohei
Opt Lett. 2024 Jul 15;49(14):3998-4001. doi: 10.1364/OL.526062.
We propose a system for imaging 1510 nm near-infrared (NIR) wavelength via upconversion (UC) luminescence in an Er-doped CaF crystal. Er ions are excited from the ground to the excited state levels by an 800-nm pre-excitation wavelength, followed by the promotion of these ions to a higher energy level by the NIR excitation wavelength. Relaxation of these excited ions gives rise to 540 nm UC luminescence in the visible region, enabling the detection of the 1510 nm NIR wavelength. Using this UC scheme, 1510 nm was successfully imaged. Our system enables imaging of NIR wavelengths using low-cost optics and readily available Si-based detectors that are sensitive only to visible wavelengths, opening new possibilities for detection and imaging of NIR wavelengths.
我们提出了一种通过掺铒CaF晶体中的上转换(UC)发光对1510 nm近红外(NIR)波长进行成像的系统。铒离子通过800 nm的预激发波长从基态激发到激发态能级,随后通过近红外激发波长将这些离子提升到更高的能级。这些受激离子的弛豫在可见光区域产生540 nm的上转换发光,从而能够检测1510 nm的近红外波长。利用这种上转换方案,成功地对1510 nm进行了成像。我们的系统能够使用低成本光学器件和仅对可见光波长敏感的现成硅基探测器对近红外波长进行成像,为近红外波长的检测和成像开辟了新的可能性。