Ma Xilin, Wang Yuhua, Seto Takatoshi
Key Laboratory for Special Function Materials and Structural Design of the Ministry of Education, National & Local Joint Engineering Laboratory for Optical Conversion Materials and Technology of National Development and Reform Commission, Department of Materials Science, School of Materials and Energy, Lanzhou University, No. 222, South Tianshui Road, Lanzhou, Gansu, 730000, China.
Light Sci Appl. 2024 Jul 15;13(1):165. doi: 10.1038/s41377-024-01507-0.
An immature understanding of the mechanisms of persistent luminescence (PersL) has hindered the development of new persistent luminescent materials (PersLMs) with increased brightness. In this regard, in-situ direct current (DC) electric field measurements were conducted on a layered structure composed of the SrAlO:Eu,Dy phosphor, and an electrode. In this study, the photoluminescence (PL) and afterglow properties were investigated with respect to voltage by analyzing the current signal and thermoluminescence (TL) spectroscopy. The intensity of PersL increased due to a novel phenomenon known as "external electric field stimulated enhancement of initial brightness of afterglow". This dynamic process was illustrated via the use of a rate equation approach, where the electrons trapped by the ultra-shallow trap at 0.022 eV could be transferred through the conduction band during long afterglow. The afterglow intensity could reach 0.538 cd m at a 6 V electric voltage. The design of an electric field stimulation technique enables the enhancement of the intensity of PersLMs and provides a new perspective for exploring the fundamental mechanics of certain established PersLMs.
对持续发光（PersL）机制的不成熟理解阻碍了具有更高亮度的新型持续发光材料（PersLMs）的开发。在这方面，对由SrAlO:Eu,Dy荧光粉和电极组成的层状结构进行了原位直流（DC）电场测量。在本研究中，通过分析电流信号和热释光（TL）光谱，研究了光致发光（PL）和余辉特性随电压的变化。由于一种被称为“外部电场刺激增强余辉初始亮度”的新现象，PersL的强度增加。通过速率方程方法说明了这一动态过程，其中在0.022 eV的超浅陷阱中捕获的电子在长时间余辉期间可以通过导带转移。在6 V电压下，余辉强度可达0.538 cd m。电场刺激技术的设计能够增强PersLMs的强度，并为探索某些已确定的PersLMs的基本机制提供了新的视角。
