Lee Woongki, Kim Taehoon, Kim Hwajeong, Kim Youngkyoo
Organic Nanoelectronics Laboratory and KNU Institute for Nanophotonics Applications (KINPA), Department of Chemical Engineering, Kyungpook National University, Daegu, 41566, Republic of Korea.
Department of Chemistry and Centre for Processable Electronics, Imperial College London, London, W12 0BZ, UK.
Adv Mater. 2024 Sep;36(36):e2403645. doi: 10.1002/adma.202403645. Epub 2024 Jul 16.
Synaptic transistors require sufficient retention (memory) performances of current signals to exactly mimic biological synapses. Ion migration has been proposed to achieve high retention characteristics but less attention has been paid to polymer-based solid-state electrolytes (SSEs) for organic synaptic transistors (OSTRs). Here, OSTRs with water-processable polymer-based SSEs, featuring ion migration-controllable molecular bridges, which are prepared by reactions of poly(4-styrenesulfonic acid) (PSSA), diethylenetriamine (DETA), and lithium hydroxide (LiOH) are demonstrated. The ion conductivity of PSSA:LiOH:DETA (1:0.4:X, PLiD) films is remarkably changed by the molar ratio (X) of DETA, which is attributed to the extended distances between the PSSA chains by the DETA bridges. The devices with the PLiD layers deliver noticeably changed hysteresis reaching an optimum at X = 0.2, leading to the longest retention of current signals upon single/double pulses. The long-term potentiation test confirms that the present OSTRs can gradually build up the postsynaptic current by gate pulses of -2 V, while the long-term depression can be adjusted by varying the depression gate pulses (≈0.2-1.2 V). The artificial neural network simulations disclose that the present OSTRs with the ion migration-controlled PLiD layers can perform synaptic processes with an accuracy of ≈96%.
突触晶体管需要足够的电流信号保持(记忆)性能,以精确模拟生物突触。有人提出利用离子迁移来实现高保持特性,但对于有机突触晶体管(OSTR)的聚合物基固态电解质(SSE)关注较少。在此,展示了具有可水加工聚合物基SSE的OSTR,其具有离子迁移可控的分子桥,该分子桥由聚(4-苯乙烯磺酸)(PSSA)、二亚乙基三胺(DETA)和氢氧化锂(LiOH)反应制备而成。PSSA:LiOH:DETA(1:0.4:X,PLiD)薄膜的离子电导率会因DETA的摩尔比(X)而显著变化,这归因于DETA桥使PSSA链之间的距离延长。具有PLiD层的器件表现出明显变化的滞后现象,在X = 0.2时达到最佳,从而在单/双脉冲作用下实现电流信号的最长保持时间。长期增强测试证实,当前的OSTR可以通过-2 V的栅极脉冲逐渐增强突触后电流,而长期抑制可以通过改变抑制栅极脉冲(≈0.2 - 1.2 V)来调节。人工神经网络模拟表明,当前具有离子迁移控制PLiD层的OSTR能够以≈96%的精度执行突触过程。