Ji Leilei, Yin Ziang, Xiao Bao, Ge Bangzhi, Xu Yadong, Jie Wanqi
State Key Laboratory of Solidification Processing & Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, Shaanxi, 710072, China.
State Key Laboratory of Radiation Medicine and Protection, Collaborative Innovation Center of Radiological Medicine of Jiangsu Higher Education Institutions, and School for Radiological and Interdisciplinary Sciences (RAD-X), Soochow University, Suzhou, 215123, China.
Chemphyschem. 2024 Oct 1;25(19):e202400149. doi: 10.1002/cphc.202400149. Epub 2024 Sep 9.
The heavy metal selenophosphate PbPSe emerges as a promising room-temperature X-ray/γ-ray detectors due to its high resistivity, robust radiation-blocking capability, and outstanding carrier mobility-lifetime product, etc. However, the high activity of phosphides poses significant impediment to the synthesis and single crystal growth. In this work, we have prepared high-quality PbPSe single crystals with using the chemical vapor transport (CVT) method. The XRD analysis combined with EDS result confirmed the uniform composition of the resulting as-grown single crystals, while UV-Vis-NIR transmittance spectra revealed the bandgap of 1.89 eV. Selected area electron diffraction patterns indicated the crystal belonged to the P2/c(14) space group. Additionally, the Au/PbPSe/Au device is fabricated, which exhibits a robust X-ray response with a sensitivity of 648.61 μC Gy cm at 400 V mm under 50 kVp. Notably, the device also excels in alpha particle detection, boasting a resolution of ~14.48 % under a bias of 400 V bias. The hole mobility-lifetime product (μτ) of PbPSe is estimated to be ~2.58×10 cm V. The results underscore potential applications of PbPSe crystal is in the field of the semiconductor radiation detectors.
重金属硒代磷酸铅（PbPSe）因其高电阻率、强大的辐射阻挡能力和出色的载流子迁移率-寿命乘积等因素，成为一种很有前景的室温X射线/γ射线探测器。然而，磷化物的高活性对其合成和单晶生长造成了重大阻碍。在这项工作中，我们采用化学气相传输（CVT）方法制备了高质量的PbPSe单晶。XRD分析结合EDS结果证实了所生长的单晶成分均匀，而紫外-可见-近红外透射光谱显示其带隙为1.89 eV。选区电子衍射图表明该晶体属于P2/c(14)空间群。此外，制备了Au/PbPSe/Au器件，在50 kVp、400 V/mm的条件下，该器件表现出强大的X射线响应，灵敏度为648.61 μC Gy cm。值得注意的是，该器件在α粒子检测方面也表现出色，在400 V偏压下分辨率约为14.48%。PbPSe的空穴迁移率-寿命乘积（μτ）估计约为2.58×10 cm V。这些结果突出了PbPSe晶体在半导体辐射探测器领域的潜在应用。
