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二维界面的量化:异质结构的质量以及纳米气泡内部的情况

Quantification of Two-Dimensional Interfaces: Quality of Heterostructures and What Is Inside a Nanobubble.

作者信息

Mondal Mainak, Manchanda Pawni, Saha Soumadeep, Jangid Abhishek, Singh Akshay

机构信息

Department of Physics, Indian Institute of Science, Bengaluru 560012, India.

Department of Physical Sciences, Indian Institute of Science Education and Research (IISER) Kolkata, Mohanpur 741246, India.

出版信息

ACS Appl Mater Interfaces. 2024 Aug 14;16(32):42608-42614. doi: 10.1021/acsami.4c06916. Epub 2024 Jul 17.

Abstract

Trapped materials at the interfaces of two-dimensional heterostructures (HS) lead to reduced coupling between the layers, resulting in degraded optoelectronic performance and device variability. Further, nanobubbles can form at the interface during transfer or after annealing. The question of what is inside a nanobubble, i.e., the trapped material, remains unanswered, limiting the studies and applications of these nanobubble systems. In this work, we report two key advances. First, we quantify the interface quality using RAW format optical imaging (unprocessed image data) and distinguish between ideal and non-ideal interfaces. The HS/substrate ratio value is calculated using a transfer matrix model and is able to detect the presence of trapped layers. The second key advance is the identification of water as the trapped material inside a nanobubble. To the best of our knowledge, this is the first study to show that optical imaging alone can quantify interface quality and find the type of trapped material inside spontaneously formed nanobubbles. We also define a quality index parameter to quantify the interface quality of HS. Quantitative measurement of the interface will help answer the question whether annealing is necessary during HS preparation and will enable creation of complex HS with small twist angles. Identification of the trapped materials will pave the way toward using nanobubbles for optical and engineering applications.

摘要

二维异质结构(HS)界面处的捕获材料会导致层间耦合降低,从而导致光电性能下降和器件性能波动。此外,在转移过程中或退火后,纳米气泡可能会在界面处形成。纳米气泡内部是什么,即捕获的材料,这个问题仍然没有答案,这限制了这些纳米气泡系统的研究和应用。在这项工作中,我们报告了两项关键进展。首先,我们使用RAW格式光学成像(未处理的图像数据)对界面质量进行量化,并区分理想界面和非理想界面。HS/衬底比值通过转移矩阵模型计算得出,能够检测到捕获层的存在。第二项关键进展是确定水是纳米气泡内部捕获的材料。据我们所知,这是第一项表明仅通过光学成像就能量化界面质量并找出自发形成的纳米气泡内部捕获材料类型的研究。我们还定义了一个质量指数参数来量化HS的界面质量。对界面进行定量测量将有助于回答在HS制备过程中是否需要退火的问题,并能够制备出具有小扭转角的复杂HS。确定捕获的材料将为将纳米气泡用于光学和工程应用铺平道路。

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