Yang Rongjie, Wang Yandong, Zhang Zhenbang, Xu Kang, Li Linhong, Cao Yong, Li Maohua, Zhang Jianxiang, Qin Yue, Zhu Boda, Guo Yingying, Zhou Yiwei, Cai Tao, Lin Cheng-Te, Nishimura Kazuhito, Xue Chen, Jiang Nan, Yu Jinhong
Key Laboratory of Advanced Marine Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
Mater Horiz. 2024 Aug 28;11(17):4064-4074. doi: 10.1039/d4mh00626g.
In the pursuit of effective thermal management for electronic devices, it is crucial to develop insulation thermal interface materials (TIMs) that exhibit exceptional through-plane thermal conductivity, low thermal resistance, and minimal compression modulus. Boron nitride (BN), given its outstanding thermal conduction and insulation properties, has garnered significant attention as a potential material for this purpose. However, previously reported BN-based composites have consistently demonstrated through-plane thermal conductivity below 10 W m K and high compression modulus, whilst also presenting challenges in terms of mass production. In this study, low molecular weight polydimethylsiloxane (PDMS) and large-size BN were utilized as the foundational materials. Utilizing a rolling-curing integrated apparatus, we successfully accomplished the continuous preparation of large-sized, high-adhesion BN films. Subsequent implementation of stacking, cold pressing, and vertical cutting techniques enabled the attainment of a remarkable BN-based TIM, characterized by an unprecedented through-plane thermal conductivity of up to 12.11 W m K, remarkably low compression modulus (55 kPa), and total effective thermal resistance (0.16 °C in W, 50 Psi). During the TIMs performance evaluation, our TIMs demonstrated superior heat dissipation capabilities compared with commercial TIMs. At a heating power density of 40 W cm, the steady-state temperature of the ceramic heating element was found to be 7 °C lower than that of the commercial TIMs. This pioneering feat not only contributes valuable technical insights for the development of high-performance insulating TIMs but also establishes a solid foundation for widespread implementation in thermal management applications across a range of electronic devices.
在追求电子设备有效的热管理过程中，开发具有卓越面内热导率、低热阻和最小压缩模量的绝缘热界面材料（TIMs）至关重要。氮化硼（BN）因其出色的热传导和绝缘性能，作为一种潜在材料已受到广泛关注。然而，先前报道的基于BN的复合材料一直表现出面内热导率低于10W/(m·K)且压缩模量大，同时在大规模生产方面也存在挑战。在本研究中，低分子量聚二甲基硅氧烷（PDMS）和大尺寸BN被用作基础材料。利用滚压固化一体化设备，我们成功实现了大尺寸、高附着力BN薄膜的连续制备。随后实施堆叠、冷压和垂直切割技术，获得了一种卓越的基于BN的TIM，其特征在于前所未有的高达12.11W/(m·K)的面内热导率、极低的压缩模量（55kPa）以及总有效热阻（50Psi下为0.16℃/W）。在TIMs性能评估期间，我们的TIMs与商业TIMs相比展现出卓越的散热能力。在40W/cm²的加热功率密度下，陶瓷加热元件的稳态温度比商业TIMs低7℃。这一开创性成果不仅为高性能绝缘TIMs的开发提供了宝贵的技术见解，也为在一系列电子设备的热管理应用中广泛应用奠定了坚实基础。
