Lee Seonjeong, Huang Yifu, Chang Yao-Feng, Baik Seungjae, Lee Jack C, Koo Minsuk
School of Electrical and Computer Engineering, University of Seoul, Seoul 02504, South Korea.
Department of Electrical and Computer Engineering, University of Texas at Austin, 10100 Burnet Road, 78758 Austin, TX, USA.
Phys Chem Chem Phys. 2024 Aug 7;26(31):20962-20970. doi: 10.1039/d4cp02669a.
While two-dimensional (2D) MoS has recently shown promise as a material for resistive random-access memory (RRAM) devices due to its demonstrated resistive switching (RS) characteristics, its practical application faces a significant challenge in industry regarding its limited yield and endurance. Our earlier work introduced an effective switching layer model to understand RS behavior in both mono- and multi-layered MoS. However, functioning as a phenomenological percolation modeling tool, it lacks the capability to accurately simulate the intricate current-voltage (-) characteristics of the device, thereby hindering its practical applicability in 2D RRAM research. In contrast to the established conductive filament model for oxide-based RRAM, the RS mechanism in 2D RRAM remains elusive. This paper presents a novel simulator aimed at providing an intuitive, visual representation of the stochastic behaviors involved in the RS process of multi-layer 2D MoS RRAM devices. Building upon the previously proposed phenomenological simulator for 2D RRAM, users can now simulate both the - characteristics and the resistive switching behaviors of the RRAM devices. Through comparison with experimental data, it was observed that yield and endurance characteristics are linked to defect distributions in MoS.
虽然二维（2D）MoS 最近因其已证明的电阻开关（RS）特性而显示出作为电阻式随机存取存储器（RRAM）器件材料的潜力，但其实际应用在工业上面临着产量和耐久性有限的重大挑战。我们早期的工作引入了一个有效的开关层模型来理解单层和多层 MoS 中的 RS 行为。然而，作为一种唯象渗流建模工具，它缺乏准确模拟器件复杂电流 - 电压（I - V）特性的能力，从而阻碍了其在 2D RRAM 研究中的实际应用。与基于氧化物的 RRAM 已确立的导电丝模型不同，2D RRAM 中的 RS 机制仍然难以捉摸。本文提出了一种新颖的模拟器，旨在为多层 2D MoS RRAM 器件的 RS 过程中涉及的随机行为提供直观的可视化表示。基于先前提出的 2D RRAM 唯象模拟器，用户现在可以模拟 RRAM 器件的 I - V 特性和电阻开关行为。通过与实验数据比较，观察到产量和耐久性特性与 MoS 中的缺陷分布有关。
